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BECHT, J. G.M., BATH, A., HENGST, E., VAN DER PUT, P.J., SCHOONMAN, J. (1991) DEPOSITION OF BORON NITRIDE BY PLASMA ENHANCED CVD USING BORANE AMINE. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991274

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Reference TypeJournal (article/letter/editorial)
TitleDEPOSITION OF BORON NITRIDE BY PLASMA ENHANCED CVD USING BORANE AMINE
JournalLe Journal de Physique IV
AuthorsBECHT, J. G.M.Author
BATH, A.Author
HENGST, E.Author
VAN DER PUT, P.J.Author
SCHOONMAN, J.Author
Year1991 (September)Volume2
PublisherEDP Sciences
DOIdoi:10.1051/jp4:1991274Search in ResearchGate
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Mindat Ref. ID10295564Long-form Identifiermindat:1:5:10295564:6
GUID0
Full ReferenceBECHT, J. G.M., BATH, A., HENGST, E., VAN DER PUT, P.J., SCHOONMAN, J. (1991) DEPOSITION OF BORON NITRIDE BY PLASMA ENHANCED CVD USING BORANE AMINE. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991274
Plain TextBECHT, J. G.M., BATH, A., HENGST, E., VAN DER PUT, P.J., SCHOONMAN, J. (1991) DEPOSITION OF BORON NITRIDE BY PLASMA ENHANCED CVD USING BORANE AMINE. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991274
In(n.d.) Le Journal de Physique IV Vol. 2. EDP Sciences

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KELDER, E. M., VAN DER PUT, P.J., BECHT, J. G.M., SCHOONMAN, J. (1991) DEPOSITION OF CUBIC BORON MONOPHOSPHIDE FROM BBr3 AND PBr3 : A REACTION MECHANISM. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991225
DEKKER, J. P., VAN DER PUT, P.J., NIEUWENHUIS, R. R., VERINGA, H. J., SCHOONMAN, J. (1991) CHEMICAL VAPOR PRECIPITATION OF SUBMICRON TITANIUM NITRIDE POWDER. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991271
Bath, A., van der Put, P. J., Becht, J. G. M., Schoonman, J., Lepley, B. (1991) Plasma enhanced chemical vapor deposition and characterization of boron nitride gate insulators on InP. Journal of Applied Physics, 70 (8). 4366-4370 doi:10.1063/1.349118
Bath, A., van der Put, P.J., Schoonman, J., Lepley, B. (1989) Study of boron nitride gate insulators grown by low temperature plasma enhanced chemical vapor deposition on InP. Applied Surface Science, 39. 135-140 doi:10.1016/0169-4332(89)90426-1
Thévenin, P., Soltani, A., Bath, A. (2001) Synthesis of hexagonal boron nitride thin films by a plasma assisted chemical vapor deposition method. Le Journal de Physique IV, 11. doi:10.1051/jp4:20013101
Besling, W. F.A., van der Put, P. J.J.M., Schoonman, J. (1995) Laser-Induced Chemical Vapour Deposition of Silicon Carbonitride. Le Journal de Physique IV, 5. doi:10.1051/jphyscol:19955112
ALEXANDROV, S. E., KOVALGIN, A. Y. (1991) REMOTE PLASMA CHEMICAL VAPOUR DEPOSITION OF SILICON NITRIDE FILMS. Le Journal de Physique IV, 2. doi:10.1051/jp4:19912100
RIE, K.-T., WÖHLE, J., GEBAUER, A. (1991) PLASMA ASSISTED CVD USING METALLO-ORGANIC COMPOUNDS AS PRECURSORS. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991248
MITURA, S. F. (1991) ELECTRON SIGNIFICANCE TO DIAMOND SYNTHESIS IN PLASMA ENHANCED CVD PROCESS. Le Journal de Physique IV, 2. doi:10.1051/jp4:19912113
Kamlag, Y., Goossens, A., Colbeck, I., Schoonman, J. (2001) Formation of cubic SiC nanocrystals by laser-assisted CVD. Le Journal de Physique IV, 11. doi:10.1051/jp4:2001358
Prange, R., Neuschütz, D. (1999) Deposition of metastable Ti(1-x)AlxN films by plasma-enhanced CVD. Le Journal de Physique IV, 9. doi:10.1051/jp4:19998103
 
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