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ALEXANDROV, S. E. (1993) Chemical vapour deposition of nitride and oxynitride dielectric films. Le Journal de Physique IV, 3. doi:10.1051/jp4:1993364

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Reference TypeJournal (article/letter/editorial)
TitleChemical vapour deposition of nitride and oxynitride dielectric films
JournalLe Journal de Physique IV
AuthorsALEXANDROV, S. E.Author
Year1993 (August)Volume3
PublisherEDP Sciences
DOIdoi:10.1051/jp4:1993364Search in ResearchGate
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Mindat Ref. ID10296074Long-form Identifiermindat:1:5:10296074:9
GUID0
Full ReferenceALEXANDROV, S. E. (1993) Chemical vapour deposition of nitride and oxynitride dielectric films. Le Journal de Physique IV, 3. doi:10.1051/jp4:1993364
Plain TextALEXANDROV, S. E. (1993) Chemical vapour deposition of nitride and oxynitride dielectric films. Le Journal de Physique IV, 3. doi:10.1051/jp4:1993364
In(n.d.) Le Journal de Physique IV Vol. 3. EDP Sciences

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ALEXANDROV, S. E., KOVALGIN, A. Y. (1991) REMOTE PLASMA CHEMICAL VAPOUR DEPOSITION OF SILICON NITRIDE FILMS. Le Journal de Physique IV, 2. doi:10.1051/jp4:19912100
ALEXANDROV, S. E., HITCHMAN, M. L., SHAMLIAN, S. (1993) A study of remote plasma enhanced CVD of silicon nitride films. Le Journal de Physique IV, 3. doi:10.1051/jp4:1993331
FREDRIKSSON, E., CARLSSON, J.-O. (1993) Chemical vapour deposition of Al2O3 on titanium oxides. Le Journal de Physique IV, 3. doi:10.1051/jp4:1993377
Alexandrov, S. E., Kriakin, V. A. (2001) Kinetics of LPCVD of gallium nitride and oxynitride films based on pyrolysis of a gallium chloride complex with ammonia GaCl3NH3. Le Journal de Physique IV, 11. doi:10.1051/jp4:2001317
WESTBERG, H., BOMAN, M., CARLSSON, J.-O. (1993) Laser-assisted chemical vapour deposition of TiSi2: aspects of deposition and etching. Le Journal de Physique IV, 3. doi:10.1051/jp4:1993330
EMIG, G., SCHOCH, G., WORMER, O. (1993) Chemical vapor deposition of hafnium carbide and hafnium nitride. Le Journal de Physique IV, 3. doi:10.1051/jp4:1993374
CROONEN, Y. H., VERSPUI, G. (1993) Laser induced chemical vapour deposition of TiN coatings at atmospheric pressure. Le Journal de Physique IV, 3. doi:10.1051/jp4:1993328
Alexandrov, S. E., Chistiakov, V. A. (2001) Kinetics of LPCVD of aluminium nitride films based on pyrolysis of aluminium chloride complex. Le Journal de Physique IV, 11. doi:10.1051/jp4:2001319
BERNDT, H., ZENG, A.-Q., STOCK, H.-R., MAYR, P. (1993) Vanadium carbide films produced by plasma-assisted metal-organic chemical vapour deposition. Le Journal de Physique IV, 3. doi:10.1051/jp4:1993343
Parkin, I. P., Field, M. N. (1999) Atmospheric pressure chemical vapour deposition of chromium oxide films. Le Journal de Physique IV, 9. doi:10.1051/jp4:1999848
Popov, C., Plass, M. F., Kulisch, W. (1999) Carbon nitride films prepared by inductively coupled plasma chemical vapour deposition from a solid carbon source. Le Journal de Physique IV, 9. doi:10.1051/jp4:1999891
 
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