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Janssens, K. G. F., Van der Biest, O., Vanheliemont, J., Maes, H. E., Hull, R., Bean, J. C. (1995) Localised strain characterisation in semiconductor structures using electron diffraction contrast imaging. Materials Science and Technology, 11. 66-71 doi:10.1179/mst.1995.11.1.66

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Reference TypeJournal (article/letter/editorial)
TitleLocalised strain characterisation in semiconductor structures using electron diffraction contrast imaging
JournalMaterials Science and Technology
AuthorsJanssens, K. G. F.Author
Van der Biest, O.Author
Vanheliemont, J.Author
Maes, H. E.Author
Hull, R.Author
Bean, J. C.Author
Year1995 (January)Volume11
PublisherInforma UK Limited
DOIdoi:10.1179/mst.1995.11.1.66Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID10304088Long-form Identifiermindat:1:5:10304088:4
GUID0
Full ReferenceJanssens, K. G. F., Van der Biest, O., Vanheliemont, J., Maes, H. E., Hull, R., Bean, J. C. (1995) Localised strain characterisation in semiconductor structures using electron diffraction contrast imaging. Materials Science and Technology, 11. 66-71 doi:10.1179/mst.1995.11.1.66
Plain TextJanssens, K. G. F., Van der Biest, O., Vanheliemont, J., Maes, H. E., Hull, R., Bean, J. C. (1995) Localised strain characterisation in semiconductor structures using electron diffraction contrast imaging. Materials Science and Technology, 11. 66-71 doi:10.1179/mst.1995.11.1.66
In(n.d.) Materials Science and Technology Vol. 11. Informa UK Limited

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Janssens, Koenraad G. F., Van der Biest, Omer, Vanhellemont, Jan, Maes, Herman E., Hull, Robert (1995) Characterization of strain in an advanced semiconductor laser structure with nanometer range resolution using a new algorithm for electron diffraction contrast imaging interpretation. Applied Physics Letters, 67 (11). 1530-1532 doi:10.1063/1.114482
Janssens, Koenraad G.F., Van der Biest, Omer, Vanhellemont, Jan, Maes, Herman E. (1997) Assessment of the quantitative characterization of localized strain using electron diffraction contrast imaging. Ultramicroscopy, 69 (3). 151-167 doi:10.1016/s0304-3991(97)00038-7
Sanz-Hervás, A., Abril, E. J., Paz, D. I., de Benito, G., Llorente, C., Aguilar, M., López, M. (1995) Characterisation of semiconductor structures by high resolution X-ray diffraction. Materials Science and Technology, 11. 72-79 doi:10.1179/mst.1995.11.1.72
Brown, P. D., Humphreys, C. J. (1995) Assessment of semiconductor epitaxial growth by transmission electron microscopy. Materials Science and Technology, 11. 54-65 doi:10.1179/mst.1995.11.1.54
Nanver, L. K., French, P. J., Goudena, E. J. G., van Zeijl, H. W. (1995) Low stress nitride as surface isolation in bipolar transistors. Materials Science and Technology, 11. 36-40 doi:10.1179/mst.1995.11.1.36
Trauwaert, M.-A., Vanhellemont, J., Maes, H. E., Bavel, A.-M. Van, Langouche, G. (1998) Low temperature anneal of electron irradiation induced defects in p type silicon. Materials Science and Technology, 14. 1295-1298 doi:10.1179/mst.1998.14.12.1295
Willoughby, A. F. W., Morante, J. R. (1995) Materials for Microelectronics. Materials Science and Technology, 11. 1 doi:10.1179/mst.1995.11.1.1
Armigliato, A., Balboni, R., Corticelli, F., Frabboni, S., Malvezzi, F., Vanhellemont, J. (1995) Analytical electron microscopy of Si1−xGex/Si heterostructures and local isolation structures. Materials Science and Technology, 11. 400-406 doi:10.1179/mst.1995.11.4.400
Trager-Cowan, C., Sweeney, F., Winkelmann, A., Wilkinson, A. J., Trimby, P. W., Day, A. P., Gholinia, A., Schmidt, N. H., Parbrook, P. J., Watson, I. M. (2006) Characterisation of nitride thin films by electron backscatter diffraction and electron channelling contrast imaging. Materials Science and Technology, 22. 1352-1358 doi:10.1179/174328406x130957
Dingley, D. J., Field, D. P. (1997) Electron backscatter diffraction and orientation imaging microscopy. Materials Science and Technology, 13. 69-78 doi:10.1179/mst.1997.13.1.69
Demarest, J., Hull, R., Schonenberg, K. T., Janssens, K. G. F. (2000) Nanoscale characterization of stresses in semiconductor devices by quantitative electron diffraction. Applied Physics Letters, 77 (3). 412-414 doi:10.1063/1.126993
 
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