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Jang, Y O, Lee, J Y (2011) Microstructural and compositional modification of In0·53Ga0·47As/In0·52Al0·48As multiquantum wells using rapid thermal annealing process. Materials Science and Technology, 27. 1299-1302 doi:10.1179/026708310x12712410312018

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Reference TypeJournal (article/letter/editorial)
TitleMicrostructural and compositional modification of In0·53Ga0·47As/In0·52Al0·48As multiquantum wells using rapid thermal annealing process
JournalMaterials Science and Technology
AuthorsJang, Y OAuthor
Lee, J YAuthor
Year2011 (August)Volume27
PublisherInforma UK Limited
DOIdoi:10.1179/026708310x12712410312018Search in ResearchGate
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Mindat Ref. ID10307811Long-form Identifiermindat:1:5:10307811:5
GUID0
Full ReferenceJang, Y O, Lee, J Y (2011) Microstructural and compositional modification of In0·53Ga0·47As/In0·52Al0·48As multiquantum wells using rapid thermal annealing process. Materials Science and Technology, 27. 1299-1302 doi:10.1179/026708310x12712410312018
Plain TextJang, Y O, Lee, J Y (2011) Microstructural and compositional modification of In0·53Ga0·47As/In0·52Al0·48As multiquantum wells using rapid thermal annealing process. Materials Science and Technology, 27. 1299-1302 doi:10.1179/026708310x12712410312018
In(n.d.) Materials Science and Technology Vol. 27. Informa UK Limited

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Ghosh, P. K., Chattopadhyay, D. (1994) Galvanomagnetic Transport of the Two-Dimensional Electron Gas in In0. 53Ga0. 47As Quantum Wells. physica status solidi (b), 184 (1). 171-177 doi:10.1002/pssb.2221840114
Dhar, S, Mitra, Mala, Roy, J B, Nag, B R (1990) An investigation of the growth of In0·53Ga0·47As layers on InP by liquid phase epitaxy. Bulletin of Materials Science, 13. 33-36 doi:10.1007/bf02744854
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