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Blase, X., Broyer, M., Kéghélian, P., Lermé, J., Mélinon, P., Pellarin, M., Perez, A., Ray, C., Vialle, J.L. (1999) Production and stability of silicon-doped heterofullerenes. The European Physical Journal D, 9. 49-54 doi:10.1007/s100530050398

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Reference TypeJournal (article/letter/editorial)
TitleProduction and stability of silicon-doped heterofullerenes
JournalThe European Physical Journal D
AuthorsBlase, X.Author
Broyer, M.Author
Kéghélian, P.Author
Lermé, J.Author
Mélinon, P.Author
Pellarin, M.Author
Perez, A.Author
Ray, C.Author
Vialle, J.L.Author
Year1999 (December)Volume9
PublisherSpringer Science and Business Media LLC
DOIdoi:10.1007/s100530050398Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID10357030Long-form Identifiermindat:1:5:10357030:5
GUID0
Full ReferenceBlase, X., Broyer, M., Kéghélian, P., Lermé, J., Mélinon, P., Pellarin, M., Perez, A., Ray, C., Vialle, J.L. (1999) Production and stability of silicon-doped heterofullerenes. The European Physical Journal D, 9. 49-54 doi:10.1007/s100530050398
Plain TextBlase, X., Broyer, M., Kéghélian, P., Lermé, J., Mélinon, P., Pellarin, M., Perez, A., Ray, C., Vialle, J.L. (1999) Production and stability of silicon-doped heterofullerenes. The European Physical Journal D, 9. 49-54 doi:10.1007/s100530050398
In(n.d.) The European Physical Journal D Vol. 9. Springer Science and Business Media LLC

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Ray, C., Pellarin, M., Lermé, J. L., Vialle, J. L., Broyer, M., Blase, X., Mélinon, P., Kéghélian, P., Perez, A. (1998) Synthesis and Structure of Silicon-doped Heterofullerenes. Physical Review Letters, 80 (24). 5365-5368 doi:10.1103/physrevlett.80.5365
Pellarin, M., Ray, C., Lermé, J., Vialle, J. L., Broyer, M., Blase, X., Kéghélian, P., Mélinon, P., Perez, A. (1999) Photolysis experiments on SiC mixed clusters: From silicon carbide clusters to silicon-doped fullerenes. The Journal of Chemical Physics, 110 (14). 6927-6938 doi:10.1063/1.478598
Kéghélian, P., Mélinon, P., Perez, A., Lermé, J., Ray, C., Pellarin, M., Broyer, M., Rousset, J.L., Cadete Santos Aires, F.J. (1999) Properties of silicon–carbon-cluster-assembled films. The European Physical Journal D, 9. 639-642 doi:10.1007/s100530050517
Pellarin, M., Ray, C., Mélinon, P., Lermé, J., Vialle, J.L., Kéghélian, P., Perez, A., Broyer, M. (1997) Silicon-carbon mixed clusters. Chemical Physics Letters, 277. 96-104 doi:10.1016/s0009-2614(97)00869-5
Mélinon, P., Blase, X., Kéghélian, P., Perez, A., Ray, C., Pellarin, M., Broyer, M., Champagnon, B. (2002) Si-C bonding in films prepared by heterofullerene deposition. Physical Review B, 65 (12) doi:10.1103/physrevb.65.125321
Mélinon, P., Kéghélian, P., Perez, A., Ray, C., Lermé, J., Pellarin, M., Broyer, M., Boudeulle, M., Champagnon, B., Rousset, J. L. (1998) Nanostructured SiC films obtained by neutral-cluster depositions. Physical Review B, 58 (24) 16481-16490 doi:10.1103/physrevb.58.16481
Mélinon, P., Kéghélian, P., Prével, B., Perez, A., Guiraud, G., LeBrusq, J., Lermé, J., Pellarin, M., Broyer, M. (1997) Nanostructured silicon films obtained by neutral cluster depositions. The Journal of Chemical Physics, 107 (23). 10278-10287 doi:10.1063/1.474168
Pellarin, M., Ray, C., Lermé, J., Vialle, J. L., Broyer, M., Mélinon, P. (2000) Gas phase study of silicon–C60 complexes: Surface coating and polymerization. The Journal of Chemical Physics, 112 (19). 8436-8445 doi:10.1063/1.481447
Mélinon, P., Tournus, F., Masenelli, B., Perez, A., Pellarin, M., Lermé, J., Broyer, M., Champagnon, B. (2001) SiC bonding in ( C60)n Sim clusters. The European Physical Journal D, 16. 337-340 doi:10.1007/s100530170124
Mélinon, P., Kéghélian, P., Prével, B., Dupuis, V., Perez, A., Champagnon, B., Guyot, Y., Pellarin, M., Lermé, J., Broyer, M., Rousset, J. L., Delichère, P. (1998) Structural, vibrational, and optical properties of silicon cluster assembled films. The Journal of Chemical Physics, 108 (11). 4607-4613 doi:10.1063/1.475871
Tournus, F., Masenelli, B., Mélinon, P., Blase, X., Perez, A., Pellarin, M., Broyer, M., Flank, A. M., Lagarde, P. (2002) BridgingC60by silicon: Towards non-Van der WaalsC60-based materials. Physical Review B, 65 (16) doi:10.1103/physrevb.65.165417
 
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