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Pearton, S. J. (1984) Comment on "Neutralization of Shallow Acceptor Levels in Silicon by Atomic Hydrogen". Physical Review Letters, 53 (8). 855 doi:10.1103/physrevlett.53.855

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Reference TypeJournal (article/letter/editorial)
TitleComment on "Neutralization of Shallow Acceptor Levels in Silicon by Atomic Hydrogen"
JournalPhysical Review Letters
AuthorsPearton, S. J.Author
Year1984 (August 20)Volume53
Issue8
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevlett.53.855Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID10542983Long-form Identifiermindat:1:5:10542983:0
GUID0
Full ReferencePearton, S. J. (1984) Comment on "Neutralization of Shallow Acceptor Levels in Silicon by Atomic Hydrogen". Physical Review Letters, 53 (8). 855 doi:10.1103/physrevlett.53.855
Plain TextPearton, S. J. (1984) Comment on "Neutralization of Shallow Acceptor Levels in Silicon by Atomic Hydrogen". Physical Review Letters, 53 (8). 855 doi:10.1103/physrevlett.53.855
In(1984, August) Physical Review Letters Vol. 53 (8) American Physical Society (APS)

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Pankove, J. I., Carlson, D. E., Berkeyheiser, J. E., Wance, R. O. (1983) Neutralization of Shallow Acceptor Levels in Silicon by Atomic Hydrogen. Physical Review Letters, 51 (24). 2224-2225 doi:10.1103/physrevlett.51.2224
Iyer, Suman B., Kumar, Vikram (1987) Comment on ‘‘Interstitial hydrogen and neutralization of shallow-donor impurities in single-crystal silicon’’. Physical Review Letters, 59 (18). 2115 doi:10.1103/physrevlett.59.2115
Seager, C. H., Anderson, R. A., Estreicher, S. K. (1995) Comment on “Inverted Order of Acceptor and Donor Levels of Monatomic Hydrogen in Silicon”. Physical Review Letters, 74 (22). 4565 doi:10.1103/physrevlett.74.4565
Assali, Lucy V. C., Leite, José R. (1985) Microscopic Mechanism of Hydrogen Passivation of Acceptor Shallow Levels in Silicon. Physical Review Letters, 55 (9). 980-982 doi:10.1103/physrevlett.55.980
Weber, Jörg, Pearton, S. J., Dautremont‐Smith, W. C. (1986) Photoluminescence study of the shallow donor neutralization in GaAs(Si) by atomic hydrogen. Applied Physics Letters, 49 (18). 1181-1183 doi:10.1063/1.97408
Johnson, N. M., Herring, C., Chadi, D. J. (1986) Interstitial hydrogen and neutralization of shallow-donor impurities in single-crystal silicon. Physical Review Letters, 56 (7). 769-772 doi:10.1103/physrevlett.56.769
Nielsen, B. Bech, Andersen, J. U., Pearton, S. J. (1988) Lattice Location of Deuterium Interacting with the Boron Acceptor in Silicon. Physical Review Letters, 60 (4). 321-324 doi:10.1103/physrevlett.60.321
Havlin, S. (1984) Comment on the Aharony-Stauffer Conjecture. Physical Review Letters, 53 (17). 1705 doi:10.1103/physrevlett.53.1705
Pearton, S. J., Tavendale, A. J. (1982) Hydrogen passivation of gold-related deep levels in silicon. Physical Review B, 26 (12) 7105-7108 doi:10.1103/physrevb.26.7105
Benioff, Paul (1984) Comment on "Dissipation in Computation". Physical Review Letters, 53 (12). 1203 doi:10.1103/physrevlett.53.1203
Johnson, N. M. (1985) Electric field dependence of hydrogen neutralization of shallow‐acceptor impurities in single‐crystal silicon. Applied Physics Letters, 47 (8). 874-876 doi:10.1063/1.95961
 
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