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Hoshino, T., Kokubun, K., Fujiwara, H., Kumamoto, K., Ishimaru, T., Ohdomari, I. (1995) Critical Domain Size of the7×7Structure for Nucleation and Growth on Si(111) Quenched Surfaces. Physical Review Letters, 75 (12). 2372-2375 doi:10.1103/physrevlett.75.2372

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Reference TypeJournal (article/letter/editorial)
TitleCritical Domain Size of the7×7Structure for Nucleation and Growth on Si(111) Quenched Surfaces
JournalPhysical Review Letters
AuthorsHoshino, T.Author
Kokubun, K.Author
Fujiwara, H.Author
Kumamoto, K.Author
Ishimaru, T.Author
Ohdomari, I.Author
Year1995 (September 18)Volume75
Issue12
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevlett.75.2372Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID10565551Long-form Identifiermindat:1:5:10565551:2
GUID0
Full ReferenceHoshino, T., Kokubun, K., Fujiwara, H., Kumamoto, K., Ishimaru, T., Ohdomari, I. (1995) Critical Domain Size of the7×7Structure for Nucleation and Growth on Si(111) Quenched Surfaces. Physical Review Letters, 75 (12). 2372-2375 doi:10.1103/physrevlett.75.2372
Plain TextHoshino, T., Kokubun, K., Fujiwara, H., Kumamoto, K., Ishimaru, T., Ohdomari, I. (1995) Critical Domain Size of the7×7Structure for Nucleation and Growth on Si(111) Quenched Surfaces. Physical Review Letters, 75 (12). 2372-2375 doi:10.1103/physrevlett.75.2372
In(1995, September) Physical Review Letters Vol. 75 (12) American Physical Society (APS)

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Kumamoto, K., Hoshino, T., Kokubun, K., Ishimaru, T., Ohdomari, I. (1996) Dynamic growth steps ofn×ndimer–adatom–stacking-fault domains on the quenched Si(111) surface. Physical Review B, 53 (19) 12907-12911 doi:10.1103/physrevb.53.12907
Kumamoto, K., Hoshino, T., Kokubun, K., Ishimaru, T., Ohdomari, I. (1995) Effect of the adatom presence on stabilizing Si(111)-n×ndimer-adatom–stacking-fault structures. Physical Review B, 52 (15) 10784-10787 doi:10.1103/physrevb.52.10784
Hoshino, T., Kumamoto, K., Kokubun, K., Ishimaru, T., Ohdomari, I. (1995) Evidence for the leading role of the stacking-fault triangle in the Si(111) 1×1→7×7 phase transition. Physical Review B, 51 (20) 14594-14597 doi:10.1103/physrevb.51.14594
Ishimaru, T., Shimada, K., Hoshino, T., Yamawaki, T., Ohdomari, I. (1999) Size changes ofn×nstacking-fault half units of dimer–adatom–stacking-fault structures on quenched Si(111) surfaces. Physical Review B, 60 (19) 13592-13597 doi:10.1103/physrevb.60.13592
Shimada, K., Ishimaru, T., Watanabe, T., Yamawaki, T., Osuka, M., Hoshino, T., Ohdomari, I. (2000) Kinetics of dimer-adatom–stacking-fault reconstruction on laser-quenched Si(111) surfaces. Physical Review B, 62 (4) 2546-2551 doi:10.1103/physrevb.62.2546
Hoshino, Tadatsugu, Kokubun, Koichi, Kumamoto, Keita, Ishimaru, Tetsuya, Ohdomari, Iwao (1995) High-Temperature Scanning Tunneling Microscopy (STM) Observation of Metastable Structures on Quenched Si(111) Surfaces. Japanese Journal of Applied Physics, 34. 3346-3350 doi:10.1143/jjap.34.3346
Ishimaru, T., Hoshino, T., Shimada, K., Yamawaki, T., Ohdomari, I. (2000) Formation and annihilation of various stacking-fault half units in dimer–adatom–stacking-fault structures on quenched Si(111) surfaces. Physical Review B, 61 (23) 15577-15580 doi:10.1103/physrevb.61.15577
Tatsumura, K., Watanabe, T., Hara, K., Hoshino, T., Ohdomari, I. (2001) Nucleation site of Cu on the H-terminated Si(111) surface. Physical Review B, 64 (11) doi:10.1103/physrevb.64.115406
Hoshino, T, Ishimaru, T, Kumamoto, K, Kawada, H, Ohdomari, I (1996) Dynamic features in generation and disappearance of Si(111)-7 × 7 domains. Applied Surface Science, 107. 53-57 doi:10.1016/s0169-4332(96)00509-0
Ishimaru, T, Shimada, K, Hoshino, T, Kawada, H, Ohdomari, I (1998) Stepwise change in Gibbs free energy curve observed in Si(111) DAS domain growth. Applied Surface Science, 130. 18-22 doi:10.1016/s0169-4332(98)00018-x
Ishimaru, T., Hoshino, T., Kawada, H., Shimada, K., Watanabe, T., Ohdomari, I. (1998) Influence of oxygen on the formation ofSi(111)−7×7domains studied by scanning tunneling microscopy. Physical Review B, 58 (15) 9863-9866 doi:10.1103/physrevb.58.9863
 
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