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Wu, Fang, Lagally, M. G. (1995) Ge-Induced Reversal of Surface Stress Anisotropy on Si(001). Physical Review Letters, 75 (13). 2534-2537 doi:10.1103/physrevlett.75.2534

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Reference TypeJournal (article/letter/editorial)
TitleGe-Induced Reversal of Surface Stress Anisotropy on Si(001)
JournalPhysical Review Letters
AuthorsWu, FangAuthor
Lagally, M. G.Author
Year1995 (September 25)Volume75
Issue13
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevlett.75.2534Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID10565605Long-form Identifiermindat:1:5:10565605:2
GUID0
Full ReferenceWu, Fang, Lagally, M. G. (1995) Ge-Induced Reversal of Surface Stress Anisotropy on Si(001). Physical Review Letters, 75 (13). 2534-2537 doi:10.1103/physrevlett.75.2534
Plain TextWu, Fang, Lagally, M. G. (1995) Ge-Induced Reversal of Surface Stress Anisotropy on Si(001). Physical Review Letters, 75 (13). 2534-2537 doi:10.1103/physrevlett.75.2534
In(1995, September) Physical Review Letters Vol. 75 (13) American Physical Society (APS)

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Wu, Fang, Chen, Xun, Zhang, Zhenyu, Lagally, M. G. (1995) Reversal of Step Roughness on Ge-Covered Vicinal Si(001). Physical Review Letters, 74 (4). 574-577 doi:10.1103/physrevlett.74.574
Chen, Xun, Wu, Fang, Zhang, Zhenyu, Lagally, M. G. (1994) Vacancy-Vacancy Interaction on Ge-Covered Si(001). Physical Review Letters, 73 (6). 850-853 doi:10.1103/physrevlett.73.850
Liu, Feng, Lagally, M. G. (1996) Interplay of Stress, Structure, and Stoichiometry in Ge-Covered Si(001). Physical Review Letters, 76 (17). 3156-3159 doi:10.1103/physrevlett.76.3156
Zhang, Zhenyu, Wu, Fang, Zandvliet, H. J. W., Poelsema, B., Metiu, H., Lagally, M. G. (1995) Energetics and Dynamics of Si Ad-Dimers on Si(001). Physical Review Letters, 74 (18). 3644-3647 doi:10.1103/physrevlett.74.3644
Rudkevich, E., Liu, Feng, Savage, D. E., Kuech, T. F., McCaughan, L., Lagally, M. G. (1998) Hydrogen Induced Si Surface Segregation on Ge-Covered Si(001). Physical Review Letters, 81 (16). 3467-3470 doi:10.1103/physrevlett.81.3467
Jaloviar, S. G., Lin, Jia-Ling, Liu, Feng, Zielasek, V., McCaughan, L., Lagally, M. G. (1999) Step-Induced Optical Anisotropy of Vicinal Si(001). Physical Review Letters, 82 (4). 791-794 doi:10.1103/physrevlett.82.791
Middel, M. T., Zandvliet, H. J. W., Poelsema, Bene (2002) Surface Stress Anisotropy of Ge(001). Physical Review Letters, 88 (19). doi:10.1103/physrevlett.88.196105
Wu, F., Jaloviar, S. G., Savage, D. E., Lagally, M. G. (1993) Roughening of steps during homoepitaxial growth on Si(001). Physical Review Letters, 71 (25). 4190-4193 doi:10.1103/physrevlett.71.4190
Patthey, L., Bullock, E. L., Abukawa, T., Kono, S., Johansson, L. S. O. (1995) Mixed Ge-Si Dimer Growth at the Ge/Si(001)-(2Γ—1) Surface. Physical Review Letters, 75 (13). 2538-2541 doi:10.1103/physrevlett.75.2538
Sutter, P., Lagally, M. G. (1999) Quantitative Determination of Dislocation-Induced Strain at the Surface of (001) Silicon-on-Insulator. Physical Review Letters, 82 (7). 1490-1493 doi:10.1103/physrevlett.82.1490
Mo, Y.-W., Savage, D. E., Swartzentruber, B. S., Lagally, M. G. (1990) Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001). Physical Review Letters, 65 (8). 1020-1023 doi:10.1103/physrevlett.65.1020
 
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