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Herrmann, Cari F., Chen, Dongxue, Boland, John J. (2002) Spontaneous Roughening: Fundamental Limits in Si(100) Halogen Etch Processing. Physical Review Letters, 89 (9). doi:10.1103/physrevlett.89.096102

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Reference TypeJournal (article/letter/editorial)
TitleSpontaneous Roughening: Fundamental Limits in Si(100) Halogen Etch Processing
JournalPhysical Review Letters
AuthorsHerrmann, Cari F.Author
Chen, DongxueAuthor
Boland, John J.Author
Year2002 (August 8)Volume89
Issue9
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevlett.89.096102Search in ResearchGate
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Mindat Ref. ID10588207Long-form Identifiermindat:1:5:10588207:9
GUID0
Full ReferenceHerrmann, Cari F., Chen, Dongxue, Boland, John J. (2002) Spontaneous Roughening: Fundamental Limits in Si(100) Halogen Etch Processing. Physical Review Letters, 89 (9). doi:10.1103/physrevlett.89.096102
Plain TextHerrmann, Cari F., Chen, Dongxue, Boland, John J. (2002) Spontaneous Roughening: Fundamental Limits in Si(100) Halogen Etch Processing. Physical Review Letters, 89 (9). doi:10.1103/physrevlett.89.096102
In(2002, August) Physical Review Letters Vol. 89 (9) American Physical Society (APS)

See Also

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Herrmann, Cari F., Boland, John J. (2001) Vacancy Dynamics and Reorganization on Bromine-EtchedSi(100)βˆ’(2Γ—1)Surfaces. Physical Review Letters, 87 (11). doi:10.1103/physrevlett.87.115503
Chen, Dongxue, Boland, John J. (2003) Steric interaction model of roughening and vacancy reorganization on halogen-terminatedSi(100)βˆ’2Γ—1surfaces. Physical Review B, 67 (19) doi:10.1103/physrevb.67.195328
Chen, Dongxue, Boland, John J. (2004) Spontaneous roughening of low-coverageSi(100)βˆ’2Γ—1:Clsurfaces: Patch formation on submonolayer halogenated surface. Physical Review B, 70 (20) doi:10.1103/physrevb.70.205432
Chen, Dongxue, Boland, John J (2002) Spontaneous roughening and vacancy dynamics on Si()-2Γ—1:Cl. Surface Science, 518 (3). doi:10.1016/s0039-6028(02)02212-4
Chen, Dongxue, Boland, John J. (2004) Dimer-Anticorrelation-Induced Stabilization of Adsorbate Clustering on theSi(100)βˆ’(2Γ—1)Surface. Physical Review Letters, 92 (9). doi:10.1103/physrevlett.92.096103
Chen, Dongxue, Boland, John J. (2002) Chemisorption-induced disruption of surface electronic structure: Hydrogen adsorption on theSi(100)βˆ’2Γ—1surface. Physical Review B, 65 (16) doi:10.1103/physrevb.65.165336
Herrmann, Cari F., Boland, John J. (1999) Probing Repulsive Interactions on the Si(100)-2 Γ— 1 Surface by Local Tip-Induced Excitation. The Journal of Physical Chemistry B, 103 (21). 4207-4211 doi:10.1021/jp990155x
Boland, John J. (1990) Structure of the H-saturated Si(100) surface. Physical Review Letters, 65 (26). 3325-3328 doi:10.1103/physrevlett.65.3325
Zhao, Y.-P., Drotar, Jason T., Wang, G.-C., Lu, T.-M. (1999) Roughening in Plasma Etch Fronts of Si(100). Physical Review Letters, 82 (24). 4882-4885 doi:10.1103/physrevlett.82.4882
Herrmann, Cari F., Boland, John J. (2000) The role of repulsive interactions in molecular bromine adsorption and patterning of Si(100)-2Γ—1. Surface Science, 460 (1). 223-228 doi:10.1016/s0039-6028(00)00541-0
Boland, John J. (1991) Evidence of Pairing and Its Role in the Recombinative Desorption of Hydrogen from the Si(100)-2Γ—1 Surface. Physical Review Letters, 67 (18). 2591 doi:10.1103/physrevlett.67.2591
 
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