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Dürr, A. C., Schreiber, F., Ritley, K. A., Kruppa, V., Krug, J., Dosch, H., Struth, B. (2003) Rapid Roughening in Thin Film Growth of an Organic Semiconductor (Diindenoperylene). Physical Review Letters, 90 (1). doi:10.1103/physrevlett.90.016104

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Reference TypeJournal (article/letter/editorial)
TitleRapid Roughening in Thin Film Growth of an Organic Semiconductor (Diindenoperylene)
JournalPhysical Review Letters
AuthorsDürr, A. C.Author
Schreiber, F.Author
Ritley, K. A.Author
Kruppa, V.Author
Krug, J.Author
Dosch, H.Author
Struth, B.Author
Year2003 (January 8)Volume90
Issue1
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevlett.90.016104Search in ResearchGate
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Mindat Ref. ID10588277Long-form Identifiermindat:1:5:10588277:2
GUID0
Full ReferenceDürr, A. C., Schreiber, F., Ritley, K. A., Kruppa, V., Krug, J., Dosch, H., Struth, B. (2003) Rapid Roughening in Thin Film Growth of an Organic Semiconductor (Diindenoperylene). Physical Review Letters, 90 (1). doi:10.1103/physrevlett.90.016104
Plain TextDürr, A. C., Schreiber, F., Ritley, K. A., Kruppa, V., Krug, J., Dosch, H., Struth, B. (2003) Rapid Roughening in Thin Film Growth of an Organic Semiconductor (Diindenoperylene). Physical Review Letters, 90 (1). doi:10.1103/physrevlett.90.016104
In(2003, January) Physical Review Letters Vol. 90 (1) American Physical Society (APS)

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Dürr, A. C., Schreiber, F., Münch, M., Karl, N., Krause, B., Kruppa, V., Dosch, H. (2002) High structural order in thin films of the organic semiconductor diindenoperylene. Applied Physics Letters, 81 (12). 2276-2278 doi:10.1063/1.1508436
Krause, B., Dürr, A. C., Ritley, K., Schreiber, F., Dosch, H., Smilgies, D. (2002) Structure and growth morphology of an archetypal system for organic epitaxy: PTCDA on Ag(111) Physical Review B, 66 (23) doi:10.1103/physrevb.66.235404
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Krause, B., Dürr, A.C., Ritley, K.A., Schreiber, F., Dosch, H., Smilgies, D. (2001) On the coexistence of different polymorphs in organic epitaxy: α and β phase of PTCDA on Ag(1 1 1). Applied Surface Science, 175. 332-336 doi:10.1016/s0169-4332(01)00082-4
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