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Hautakangas, S., Oila, J., Alatalo, M., Saarinen, K., Liszkay, L., Seghier, D., Gislason, H. P. (2003) Vacancy Defects as Compensating Centers in Mg-Doped GaN. Physical Review Letters, 90 (13). doi:10.1103/physrevlett.90.137402

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Reference TypeJournal (article/letter/editorial)
TitleVacancy Defects as Compensating Centers in Mg-Doped GaN
JournalPhysical Review Letters
AuthorsHautakangas, S.Author
Oila, J.Author
Alatalo, M.Author
Saarinen, K.Author
Liszkay, L.Author
Seghier, D.Author
Gislason, H. P.Author
Year2003 (April 3)Volume90
Issue13
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevlett.90.137402Search in ResearchGate
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Mindat Ref. ID10588556Long-form Identifiermindat:1:5:10588556:8
GUID0
Full ReferenceHautakangas, S., Oila, J., Alatalo, M., Saarinen, K., Liszkay, L., Seghier, D., Gislason, H. P. (2003) Vacancy Defects as Compensating Centers in Mg-Doped GaN. Physical Review Letters, 90 (13). doi:10.1103/physrevlett.90.137402
Plain TextHautakangas, S., Oila, J., Alatalo, M., Saarinen, K., Liszkay, L., Seghier, D., Gislason, H. P. (2003) Vacancy Defects as Compensating Centers in Mg-Doped GaN. Physical Review Letters, 90 (13). doi:10.1103/physrevlett.90.137402
In(2003, April) Physical Review Letters Vol. 90 (13) American Physical Society (APS)

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Hautakangas, S., Saarinen, K., Liszkay, L., Freitas, J. A., Henry, R. L. (2005) Role of open volume defects in Mg-doped GaN films studied by positron annihilation spectroscopy. Physical Review B, 72 (16) doi:10.1103/physrevb.72.165303
Hautakangas, S., Ranki, V., Makkonen, I., Puska, M.J., Saarinen, K., Liszkay, L., Seghier, D., Gislason, H.P., Freitas, Jr, J.A., Henry, R.L., Xu, X., Look, D.C. (2006) Gallium and nitrogen vacancies in GaN: Impurity decoration effects. Physica B: Condensed Matter, 376. 424-427 doi:10.1016/j.physb.2005.12.109
Seghier, D., Gislason, H.P. (2003) Noise spectroscopy of metastable deep level centers in Mg-doped GaN. Physica B: Condensed Matter, 340. 381-384 doi:10.1016/j.physb.2003.09.062
Laukkanen, P., Lehkonen, S., Uusimaa, P., Pessa, M., Oila, J., Hautakangas, S., Saarinen, K., Likonen, J., Keränen, J. (2002) Structural, electrical, and optical properties of defects in Si-doped GaN grown by molecular-beam epitaxy on hydride vapor phase epitaxy GaN on sapphire. Journal of Applied Physics, 92 (2). 786-792 doi:10.1063/1.1488241
Laakso, A, Oila, J, Kemppinen, A, Saarinen, K, Egger, W, Liszkay, L, Sperr, P, Lu, H, Schaff, W.J (2004) Vacancy defects in epitaxial InN: identification and electrical properties. Journal of Crystal Growth, 269 (1). 41-49 doi:10.1016/j.jcrysgro.2004.05.032
Rummukainen, M., Oila, J., Laakso, A., Saarinen, K., Ptak, A. J., Myers, T. H. (2004) Vacancy defects in O-doped GaN grown by molecular-beam epitaxy: The role of growth polarity and stoichiometry. Applied Physics Letters, 84 (24). 4887-4889 doi:10.1063/1.1762984
Seghier, D, Gislason, H P (2005) Noise and its correlation to deep defects in Mg-doped GaN. Journal of Physics D: Applied Physics, 38. 843-846 doi:10.1088/0022-3727/38/6/009
Demchenko, D. O., Reshchikov, M. A. (2015) Comment on “Determination of the Nitrogen Vacancy as a Shallow Compensating Center in GaN Doped with Divalent Metals”. Physical Review Letters, 115 (2). doi:10.1103/physrevlett.115.029701
Alatalo, M., Kauppinen, H., Saarinen, K., Puska, M. J., Mäkinen, J., Hautojärvi, P., Nieminen, R. M. (1995) Identification of vacancy defects in compound semiconductors by core-electron annihilation: Application to InP. Physical Review B, 51 (7) 4176-4185 doi:10.1103/physrevb.51.4176
Voyles, P. M., Chadi, D. J., Citrin, P. H., Muller, D. A., Grazul, J. L., Northrup, P. A., Gossmann, H.-J. L. (2003) Evidence for a New Class of Defects in Highlyn-Doped Si: Donor-Pair-Vacancy-Interstitial Complexes. Physical Review Letters, 91 (12). doi:10.1103/physrevlett.91.125505
Ranki, V., Nissilä, J., Saarinen, K. (2002) Formation of Vacancy-Impurity Complexes by Kinetic Processes in Highly As-Doped Si. Physical Review Letters, 88 (10). doi:10.1103/physrevlett.88.105506
 
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