Reference Type | Journal (article/letter/editorial) |
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Title | Nonballistic Spin-Field-Effect Transistor |
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Journal | Physical Review Letters |
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Authors | Schliemann, John | Author |
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Egues, J. Carlos | Author |
Loss, Daniel | Author |
Year | 2003 (April 8) | Volume | 90 |
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Issue | 14 |
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Publisher | American Physical Society (APS) |
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DOI | doi:10.1103/physrevlett.90.146801Search in ResearchGate |
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| Generate Citation Formats |
Mindat Ref. ID | 10588603 | Long-form Identifier | mindat:1:5:10588603:9 |
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GUID | 0 |
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Full Reference | Schliemann, John, Egues, J. Carlos, Loss, Daniel (2003) Nonballistic Spin-Field-Effect Transistor. Physical Review Letters, 90 (14). doi:10.1103/physrevlett.90.146801 |
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Plain Text | Schliemann, John, Egues, J. Carlos, Loss, Daniel (2003) Nonballistic Spin-Field-Effect Transistor. Physical Review Letters, 90 (14). doi:10.1103/physrevlett.90.146801 |
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In | (2003, April) Physical Review Letters Vol. 90 (14) American Physical Society (APS) |
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