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An, Qi, Goddard, William A., Cheng, Tao (2014) Atomistic Explanation of Shear-Induced Amorphous Band Formation in Boron Carbide. Physical Review Letters, 113 (9). doi:10.1103/physrevlett.113.095501

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Reference TypeJournal (article/letter/editorial)
TitleAtomistic Explanation of Shear-Induced Amorphous Band Formation in Boron Carbide
JournalPhysical Review Letters
AuthorsAn, QiAuthor
Goddard, William A.Author
Cheng, TaoAuthor
Year2014 (August 28)Volume113
Issue9
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevlett.113.095501Search in ResearchGate
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Mindat Ref. ID10660480Long-form Identifiermindat:1:5:10660480:9
GUID0
Full ReferenceAn, Qi, Goddard, William A., Cheng, Tao (2014) Atomistic Explanation of Shear-Induced Amorphous Band Formation in Boron Carbide. Physical Review Letters, 113 (9). doi:10.1103/physrevlett.113.095501
Plain TextAn, Qi, Goddard, William A., Cheng, Tao (2014) Atomistic Explanation of Shear-Induced Amorphous Band Formation in Boron Carbide. Physical Review Letters, 113 (9). doi:10.1103/physrevlett.113.095501
In(2014, August) Physical Review Letters Vol. 113 (9) American Physical Society (APS)

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An, Qi, Goddard, William A. (2015) Atomistic Origin of Brittle Failure of Boron Carbide from Large-Scale Reactive Dynamics Simulations: Suggestions toward Improved Ductility. Physical Review Letters, 115 (10). doi:10.1103/physrevlett.115.105501
An, Qi, Goddard, William A., Xiao, Hai, Cheng, Tao (2014) Deformation Induced Solid–Solid Phase Transitions in Gamma Boron. Chemistry of Materials, 26. 4289-4298 doi:10.1021/cm5020114
Xie, Kelvin Y., An, Qi, Toksoy, M. Fatih, McCauley, James W., Haber, Richard A., Goddard, William A., Hemker, Kevin J. (2015) Atomic-Level Understanding of “Asymmetric Twins” in Boron Carbide. Physical Review Letters, 115 (17). doi:10.1103/physrevlett.115.175501
Shen, Yidi, Fuller, Jon, An, Qi (2021) Mitigating the formation of amorphous shear band in boron carbide. Journal of Applied Physics, 129 (14) 140902pp. doi:10.1063/5.0044526
An, Qi, Goddard, William A. (2014) Microalloying Boron Carbide with Silicon to Achieve Dramatically Improved Ductility. The Journal of Physical Chemistry Letters, 5 (23). 4169-4174 doi:10.1021/jz5022697
An, Qi, Goddard, William A. (2017) Nanotwins soften boron-rich boron carbide (B13C2). Applied Physics Letters, 110 (11). 111902pp. doi:10.1063/1.4978644
Guo, Dezhou, Song, Shuangxi, Luo, Ruichun, Goddard, William A., Chen, Mingwei, Reddy, Kolan Madhav, An, Qi (2018) Grain Boundary Sliding and Amorphization are Responsible for the Reverse Hall-Petch Relation in Superhard Nanocrystalline Boron Carbide. Physical Review Letters, 121 (14). doi:10.1103/physrevlett.121.145504
An, Qi, Reddy, K. Madhav, Xie, Kelvin Y., Hemker, Kevin J., Goddard, William A. (2016) New Ground-State Crystal Structure of Elemental Boron. Physical Review Letters, 117 (8). doi:10.1103/physrevlett.117.085501
Yang, Xiaokun, Coleman, Shawn P., Lasalvia, Jerry C., Goddard, William A., An, Qi (2018) Shear-Induced Brittle Failure along Grain Boundaries in Boron Carbide. ACS Applied Materials & Interfaces, 10. 5072-5080 doi:10.1021/acsami.7b16782
Dong, Jianjun, Drabold, D. A. (1998) Atomistic Structure of Band-Tail States in Amorphous Silicon. Physical Review Letters, 80 (9). 1928-1931 doi:10.1103/physrevlett.80.1928
Yang, Xiaokun, Goddard, William A., An, Qi (2018) Asymmetric twins in boron rich boron carbide. Physical Chemistry Chemical Physics, 20 (19). 13340-13347 doi:10.1039/c8cp01429a
 
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