Ito, Ryoichi (1963) Ionized Impurity Scattering inn-Type Germanium andn-Type Silicon. Journal of the Physical Society of Japan, 18 (11). 1604-1611 doi:10.1143/jpsj.18.1604
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | Ionized Impurity Scattering inn-Type Germanium andn-Type Silicon | ||
Journal | Journal of the Physical Society of Japan | ||
Authors | Ito, Ryoichi | Author | |
Year | 1963 (November 15) | Volume | 18 |
Issue | 11 | ||
Publisher | Physical Society of Japan | ||
DOI | doi:10.1143/jpsj.18.1604Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 11184484 | Long-form Identifier | mindat:1:5:11184484:9 |
GUID | 0 | ||
Full Reference | Ito, Ryoichi (1963) Ionized Impurity Scattering inn-Type Germanium andn-Type Silicon. Journal of the Physical Society of Japan, 18 (11). 1604-1611 doi:10.1143/jpsj.18.1604 | ||
Plain Text | Ito, Ryoichi (1963) Ionized Impurity Scattering inn-Type Germanium andn-Type Silicon. Journal of the Physical Society of Japan, 18 (11). 1604-1611 doi:10.1143/jpsj.18.1604 | ||
In | (1963, November) Journal of the Physical Society of Japan Vol. 18 (11) Physical Society of Japan |
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