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Ohmura, Yamichi (1975) Magnetoresistance Anisotropies in n-Type (001) Si on Sapphire. Journal of the Physical Society of Japan, 39 (2). 549-550 doi:10.1143/jpsj.39.549

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Reference TypeJournal (article/letter/editorial)
TitleMagnetoresistance Anisotropies in n-Type (001) Si on Sapphire
JournalJournal of the Physical Society of Japan
AuthorsOhmura, YamichiAuthor
Year1975 (August 15)Volume39
Issue2
PublisherPhysical Society of Japan
DOIdoi:10.1143/jpsj.39.549Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID11192212Long-form Identifiermindat:1:5:11192212:7
GUID0
Full ReferenceOhmura, Yamichi (1975) Magnetoresistance Anisotropies in n-Type (001) Si on Sapphire. Journal of the Physical Society of Japan, 39 (2). 549-550 doi:10.1143/jpsj.39.549
Plain TextOhmura, Yamichi (1975) Magnetoresistance Anisotropies in n-Type (001) Si on Sapphire. Journal of the Physical Society of Japan, 39 (2). 549-550 doi:10.1143/jpsj.39.549
In(1975, August) Journal of the Physical Society of Japan Vol. 39 (2) Physical Society of Japan

See Also

These are possibly similar items as determined by title/reference text matching only.

Ohmura, Yamichi (1979) Galvanomagnetic Effect for Holes and the Valence Band in (001) Silicon on Sapphire. Journal of the Physical Society of Japan, 47 (1). 145-152 doi:10.1143/jpsj.47.145
Ohmura, Yamichi (1992) Numerical Study of the Piezoresistance Effect in p-Type Si. Journal of the Physical Society of Japan, 61 (6). 2159 doi:10.1143/jpsj.61.2159
Ohmura, Yamichi (1992) Numerical Study of the Piezoresistance Effect inp-Type Si. Journal of the Physical Society of Japan, 61 (1). 217-226 doi:10.1143/jpsj.61.217
Ohmura, Yamichi (1967) On the Cyclotron Resonance of Holes in Zinc Blende Type Semiconductors. Journal of the Physical Society of Japan, 22 (3). 923 doi:10.1143/jpsj.22.923
Ohmura, Yamichi (1966) Galvanomagnetic Anisotropy of p-Type InSb. Journal of the Physical Society of Japan, 21 (10). 1886-1891 doi:10.1143/jpsj.21.1886
Ohmura, Yamichi (1994) Pressure Dependence of Resistivity inp-Type Germanium. Journal of the Physical Society of Japan, 63 (4). 1628-1629 doi:10.1143/jpsj.63.1628
Ohmura, Yamichi (1993) Role of the Valence Band Density of States in the Piezoresistance ofp-Type Semiconductors Si and Ge. Journal of the Physical Society of Japan, 62 (10). 3615-3620 doi:10.1143/jpsj.62.3615
Ohmura, Yamichi (1997) Pressure Dependence of Hall Constant inp-Type Ge. Journal of the Physical Society of Japan, 66 (5). 1565-1566 doi:10.1143/jpsj.66.1565
Ohmura, Yamichi (1995) Piezoresistance Effects Associated with Hydrostatic Pressure inp-Type Ge. Journal of the Physical Society of Japan, 64 (12). 4980-4981 doi:10.1143/jpsj.64.4980
Ohmura, Yamichi (1976) Magnetoresistance and the Electronic Structure of Si on Sapphire. Japanese Journal of Applied Physics, 15. 233 doi:10.7567/jjaps.15s1.233
Ohmura, Yamichi (1968) Landau Levels and Cyclotron Resonance of Holes in InSb. Journal of the Physical Society of Japan, 25 (3). 740-754 doi:10.1143/jpsj.25.740
 
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