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Natori, Akiko (1976) Displacive Phase Transition in Narrow-Gap Semiconductors. Journal of the Physical Society of Japan, 40 (1). 163-171 doi:10.1143/jpsj.40.163

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Reference TypeJournal (article/letter/editorial)
TitleDisplacive Phase Transition in Narrow-Gap Semiconductors
JournalJournal of the Physical Society of Japan
AuthorsNatori, AkikoAuthor
Year1976 (January 15)Volume40
Issue1
PublisherPhysical Society of Japan
DOIdoi:10.1143/jpsj.40.163Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID11192425Long-form Identifiermindat:1:5:11192425:1
GUID0
Full ReferenceNatori, Akiko (1976) Displacive Phase Transition in Narrow-Gap Semiconductors. Journal of the Physical Society of Japan, 40 (1). 163-171 doi:10.1143/jpsj.40.163
Plain TextNatori, Akiko (1976) Displacive Phase Transition in Narrow-Gap Semiconductors. Journal of the Physical Society of Japan, 40 (1). 163-171 doi:10.1143/jpsj.40.163
In(1976, January) Journal of the Physical Society of Japan Vol. 40 (1) Physical Society of Japan

See Also

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Natori, Akiko (1976) Effect of Lattice Anharmonicity on Displacive Phase Transition in Narrow-Gap Semiconductors. Journal of the Physical Society of Japan, 41 (3). 782-786 doi:10.1143/jpsj.41.782
Natori, Akiko (1982) Electron Correlation Effect in Impurity Doped Semiconductors. Journal of the Physical Society of Japan, 51 (9). 2869-2877 doi:10.1143/jpsj.51.2869
Natori, Akiko, Kamimura, Hiroshi (1977) The Electronic Structure of a D-Centre in Many-Valley Semiconductors. Journal of the Physical Society of Japan, 43 (4). 1270-1279 doi:10.1143/jpsj.43.1270
Gemma, Nobuhiro, Natori, Akiko, Kamimura, Hiroshi (1982) Localized and Delocalized Characters in Optical Spectra of Interacting Donors in Semiconductors. Journal of the Physical Society of Japan, 51 (4). 1207-1215 doi:10.1143/jpsj.51.1207
Nagasawa, Akira (1976) Preceding Phenomena of Martensitic Phase Transition in AgCd. Journal of the Physical Society of Japan, 40 (1). 93-99 doi:10.1143/jpsj.40.93
Nagasawa, Akira (1976) Nature of Martensitic Phase Transition in β Phase Alloys. Journal of the Physical Society of Japan, 40 (4). 1021-1026 doi:10.1143/jpsj.40.1021
Kurebayashi, Daichi, Nomura, Kentaro (2014) Weyl Semimetal Phase in Solid-Solution Narrow-Gap Semiconductors. Journal of the Physical Society of Japan, 83 (6). 63709pp. doi:10.7566/jpsj.83.063709
Nakayama, Masatoshi (1976) Theory of Intrinsic Indirect Exchange Coupling in Semiconductors. Journal of the Physical Society of Japan, 40 (1). 82-89 doi:10.1143/jpsj.40.82
Ando, Tsuneya (1985) Subbands in Space-Charge Layers on Narrow Gap Semiconductors: Validity of Semiclassical Approximation. Journal of the Physical Society of Japan, 54 (7). 2676-2681 doi:10.1143/jpsj.54.2676
Kasano, Hironobu, Mashiyama, Hiroyuki (2003) Displacive Character of the Paraelectric–Ferroelectric Phase Transition in K2ZnI4. Journal of the Physical Society of Japan, 72 (9). 2236-2242 doi:10.1143/jpsj.72.2236
Natori, Akiko (1986) Temperature Dependence and Anisotropy of Resistivity of Graphite in High Temperatures. Journal of the Physical Society of Japan, 55 (12). 4370-4381 doi:10.1143/jpsj.55.4370
 
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