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Zhang, Baoping, Kano, Satoru S., Shiraki, Yasuhiro, Ito, Ryoichi (1993) Oscillator Strength of Excitons in InGaAs/GaAs Quantum Wells. Journal of the Physical Society of Japan, 62 (9). 3031-3034 doi:10.1143/jpsj.62.3031

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Reference TypeJournal (article/letter/editorial)
TitleOscillator Strength of Excitons in InGaAs/GaAs Quantum Wells
JournalJournal of the Physical Society of Japan
AuthorsZhang, BaopingAuthor
Kano, Satoru S.Author
Shiraki, YasuhiroAuthor
Ito, RyoichiAuthor
Year1993 (September 15)Volume62
Issue9
PublisherPhysical Society of Japan
DOIdoi:10.1143/jpsj.62.3031Search in ResearchGate
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Mindat Ref. ID11204598Long-form Identifiermindat:1:5:11204598:6
GUID0
Full ReferenceZhang, Baoping, Kano, Satoru S., Shiraki, Yasuhiro, Ito, Ryoichi (1993) Oscillator Strength of Excitons in InGaAs/GaAs Quantum Wells. Journal of the Physical Society of Japan, 62 (9). 3031-3034 doi:10.1143/jpsj.62.3031
Plain TextZhang, Baoping, Kano, Satoru S., Shiraki, Yasuhiro, Ito, Ryoichi (1993) Oscillator Strength of Excitons in InGaAs/GaAs Quantum Wells. Journal of the Physical Society of Japan, 62 (9). 3031-3034 doi:10.1143/jpsj.62.3031
In(1993, September) Journal of the Physical Society of Japan Vol. 62 (9) Physical Society of Japan

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Zhang, Baoping, Kano, Satoru S., Shiraki, Yasuhiro, Ito, Ryoichi (1994) Reflectance study of the oscillator strength of excitons in semiconductor quantum wells. Physical Review B, 50 (11) 7499-7508 doi:10.1103/physrevb.50.7499
Zhang, Baoping, Kano, Satoru S., Ito, Ryoichi, Shiraki, Yasuhiro (1995) Optical Properties of Excitons in Semiconductor Quantum Wells. Japanese Journal of Applied Physics, 34. 167 doi:10.7567/jjaps.34s1.167
Zhang, Baoping, Shiraki, Yasuhiro, Ito, Ryoichi (1994) Well Width Dependence of the Exciton Phonon Interaction in Semiconductor Quantum Wells. Journal of the Physical Society of Japan, 63 (1). 358-362 doi:10.1143/jpsj.63.358
Takahashi, Yutaka, Muraki, Koji, Fukatsu, Susumu, Kano, Satoru S., Shiraki, Yasuhiro, Ito, Ryoichi (1993) Fast Lateral Transport of Excitons in a GaAs/AlGaAs Quantum Well. Japanese Journal of Applied Physics, 32. 5586-5590 doi:10.1143/jjap.32.5586
Takahashi, Yutaka, Owa, Soichi, Kano, Satoru S., Muraki, Koji, Fukatsu, Susumi, Shiraki, Yasuhiro, Ito, Ryoichi (1992) Two‐dimensional exciton dynamics in InGaAs/GaAs quantum wells. Applied Physics Letters, 60 (2). 213-215 doi:10.1063/1.106967
Zhang, Xiong, Onabe, Kentaro, Nitta, Yoshiki, Zhang, Baoping, Fukatsu, Susumu, Shiraki, Yasuhiro, Ito, Ryoichi (1991) Dependence of Band Offsets on Elastic Strain in GaAs/GaAs1-xPxStrained-Layer Single Quantum Wells. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1631
Takahashi, Yutaka, Kano, Satoru S., Muraki, Koji, Fukatsu, Susumu, Shiraki, Yasuhiro, Ito, Ryoichi (1994) Direct observation of exciton localization in a GaAs/AlGaAs quantum well. Applied Physics Letters, 64 (14). 1845-1847 doi:10.1063/1.111774
Ohashi, Makoto, Kondo, Takashi, Kumata, Kiyoshi, Fukatsu, Susumu, Kano, Satoru S., Shiraki, Yasuhiro, Ito, Ryoichi (1992) Nonlinear Optical Coefficient of AlAs Thin Film on GaAs Substrate. Japanese Journal of Applied Physics, 31. doi:10.1143/jjap.31.l843
Zhang, Xiong, Onabe, Kentaro, Nitta, Yoshiki, Zhang, Baoping, Fukatsu, Susumu, Shiraki, Yasuhiro, Ito, Ryoichi (1992) Optical characterization of band-edge lineups in GaAs/GaAs1−xPx strained-layer quantum wells. Surface Science, 267 (1). 110-113 doi:10.1016/0039-6028(92)91101-g
Takahashi, Yutaka, Kato, Yoshimine, Kano, Satoru S., Fukatsu, Susumu, Shiraki, Yasuhiro, Ito, Ryoichi (1994) The effect of electric field on the excitonic states in coupled quantum well structures. Journal of Applied Physics, 76 (4). 2299-2305 doi:10.1063/1.357601
Yaguchi, Hiroyuki, Zhang, Xiong, Ota, Kazunobu, Nagahara, Masaki, Onabe, Kentaro, Shiraki, Yasuhiro, Ito, Ryoichi (1993) Photoreflectance Study of GaAs/GaAsP Strained-Barrier Quantum Well Structures. Japanese Journal of Applied Physics, 32. 544-547 doi:10.1143/jjap.32.544
 
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