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Noh, Y. K., Hwang, Y. J., Kim, M. D., Kwon, Y. J., Oh, J. E., Kim, Y. H., Lee, J. Y. (2007) Strucrural Properties of GaSb Layers Grown on InAs, AlSb, and GaSb Buffer Layers on GaAs (001) Substrates. Journal of the Korean Physical Society, 50 (6). 1929pp. doi:10.3938/jkps.50.1929

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Reference TypeJournal (article/letter/editorial)
TitleStrucrural Properties of GaSb Layers Grown on InAs, AlSb, and GaSb Buffer Layers on GaAs (001) Substrates
JournalJournal of the Korean Physical Society
AuthorsNoh, Y. K.Author
Hwang, Y. J.Author
Kim, M. D.Author
Kwon, Y. J.Author
Oh, J. E.Author
Kim, Y. H.Author
Lee, J. Y.Author
Year2007 (June 15)Volume50
Issue6
PublisherKorean Physical Society
DOIdoi:10.3938/jkps.50.1929Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID11231364Long-form Identifiermindat:1:5:11231364:1
GUID0
Full ReferenceNoh, Y. K., Hwang, Y. J., Kim, M. D., Kwon, Y. J., Oh, J. E., Kim, Y. H., Lee, J. Y. (2007) Strucrural Properties of GaSb Layers Grown on InAs, AlSb, and GaSb Buffer Layers on GaAs (001) Substrates. Journal of the Korean Physical Society, 50 (6). 1929pp. doi:10.3938/jkps.50.1929
Plain TextNoh, Y. K., Hwang, Y. J., Kim, M. D., Kwon, Y. J., Oh, J. E., Kim, Y. H., Lee, J. Y. (2007) Strucrural Properties of GaSb Layers Grown on InAs, AlSb, and GaSb Buffer Layers on GaAs (001) Substrates. Journal of the Korean Physical Society, 50 (6). 1929pp. doi:10.3938/jkps.50.1929
In(2007, June) Journal of the Korean Physical Society Vol. 50 (6) Korean Physical Society

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Kim, S. Y., Song, J. D., Kim, T. W. (2011) Effect of InAs Thickness on the Structural and the Electrical Properties of InAs Layers Grown on GaAs Substrates with an AlAs0.32Sb0.68 Buffer Layer. Journal of the Korean Physical Society, 58 (5). 1347-1350 doi:10.3938/jkps.58.1347
Kim, Y. H., Lee, J. Y., Noh, Y. G., Kim, M. D., Oh, J. E. (2007) High-resolution transmission electron microscopy study on the growth modes of GaSb islands grown on a semi-insulating GaAs (001) substrate. Applied Physics Letters, 90 (24). 241915pp. doi:10.1063/1.2747674
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