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Park, Jun-Seo, Lee, Gwang-Geun, Park, Byung-Eun, Kim, Chul-Ju (2007) Fabrication and Electrical Properties of Au/Bi3.35La0.75Ti3O12/ZrO2/Si Structure. Journal of the Korean Physical Society, 51 (92). 727pp. doi:10.3938/jkps.51.727

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Reference TypeJournal (article/letter/editorial)
TitleFabrication and Electrical Properties of Au/Bi3.35La0.75Ti3O12/ZrO2/Si Structure
JournalJournal of the Korean Physical Society
AuthorsPark, Jun-SeoAuthor
Lee, Gwang-GeunAuthor
Park, Byung-EunAuthor
Kim, Chul-JuAuthor
Year2007 (August 14)Volume51
Issue92
PublisherKorean Physical Society
DOIdoi:10.3938/jkps.51.727Search in ResearchGate
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Mindat Ref. ID11232300Long-form Identifiermindat:1:5:11232300:8
GUID0
Full ReferencePark, Jun-Seo, Lee, Gwang-Geun, Park, Byung-Eun, Kim, Chul-Ju (2007) Fabrication and Electrical Properties of Au/Bi3.35La0.75Ti3O12/ZrO2/Si Structure. Journal of the Korean Physical Society, 51 (92). 727pp. doi:10.3938/jkps.51.727
Plain TextPark, Jun-Seo, Lee, Gwang-Geun, Park, Byung-Eun, Kim, Chul-Ju (2007) Fabrication and Electrical Properties of Au/Bi3.35La0.75Ti3O12/ZrO2/Si Structure. Journal of the Korean Physical Society, 51 (92). 727pp. doi:10.3938/jkps.51.727
In(2007, August) Journal of the Korean Physical Society Vol. 51 (92) Korean Physical Society

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PARK, BYUNG EUN, LEE, GWANG GEUN (2010) Fabrication and Characterization of MFIS-FET Using PVDF-TrFE/ZrO2/Si Structure. Journal of the Korean Physical Society, 56 (5). 1484-1487 doi:10.3938/jkps.56.1484
Jeon, Ho-Sung, Park, Kwang-Hun, Park, Byung-Eun, Kim, Chul-Ju (2007) Effects of Annealing on the Electrical Properties of the BLT/STA/Si Structure for Ferroelectric-Gate Field-Effect Transistors. Journal of the Korean Physical Society, 51 (92). 731pp. doi:10.3938/jkps.51.731
Kim, Min Gee, Han, Dae Hee, Kim, Soo Yong, Lee, Gwang Geun, Park, Kyung Eun, Park, Byung Eun, Han, Seung Pil (2020) Fabrication of a Paper Memory Transistor by Using a Solution Process. Journal of the Korean Physical Society, 76 (12) 1088-1091 doi:10.3938/jkps.76.1088
Kim, Jeong-Hwan, Kim, Joo-Nam, Park, Byung-Eun (2007) Electrical Properties of Metal-Ferroelectric-Semiconductor Structures Based on Ferroelectric Polyvinylidene Fluoride (PVDF). Journal of the Korean Physical Society, 51 (92). 723pp. doi:10.3938/jkps.51.723
HAN, HUI-SEONG, LEE, GWANG-GEUN, PARK, BYUNG-EUN (2010) FABRICATION AND ELECTRICAL PROPERTIES OF Au/PVDF-TrFE/LaZrOx/Si(100) STRUCTURE. International Journal of Modern Physics B, 24 (22). 4203-4208 doi:10.1142/s0217979210056554
JEON, Ho-Seung, KIM, Jeong-Hwan, KIM, Joo-Nam, IM, Jong-Hyun, PARK, Byung-Eun, KIM, Chul-Ju (2007) Sol-Gel Deposited LaZrO x Buffer Layer for Ferroelectric Thin Films. Journal of the Korean Physical Society, 51 (12). 100pp. doi:10.3938/jkps.51.100
Han, Hui Seong, Jeon, Ho Seung, Lee, Gwang Geun, Kim, Kwi Jung, Park, Byung Eun (2009) ? Electric Properties of PVDF-TrFE (75/25) thin film with Lanthanum Zirconium Oxide Buffer Layer for FeRAM. Journal of the Korean Physical Society, 55 (2). 898-901 doi:10.3938/jkps.55.898
Lee, Byung Chul, Lee, Hong Jin, Park, Jun Hyung, Moon, Byung Seok, Kim, Sang Eun, Lee, Won Kyeong, Jung, Kyung Il, Chae, Sung Ki, Kim, Jae Hong (2010) Intensification of the KOTRON-13 Cyclotron by Optimizing the Ion Source. Journal of the Korean Physical Society, 57 (6). 1376-1380 doi:10.3938/jkps.57.1376
Im, Jong-Hyun, Kim, Kwi-Jung, An, Gui-Zhe, Park, Byung Eun (2011) Electrical properties of metal-ferroelectric-insulator-semiconductor structure with Lanthanum Dysprosium Oxide and SrBi2Ta2O9. Journal of the Korean Physical Society, 59 (3). 2565-2569 doi:10.3938/jkps.59.2565
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