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Hai, Le Van, Takeshi, Kanashima, Okuyama, Masanori (2009) Enhancement of Memory Retention Time of Metal/Ferroelectric/Insulator/Semiconductor Structure by Using Fast Annealing and Nitrogen Radical Irradiation. Journal of the Korean Physical Society, 55 (2). 884-887 doi:10.3938/jkps.55.884

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Reference TypeJournal (article/letter/editorial)
TitleEnhancement of Memory Retention Time of Metal/Ferroelectric/Insulator/Semiconductor Structure by Using Fast Annealing and Nitrogen Radical Irradiation
JournalJournal of the Korean Physical Society
AuthorsHai, Le VanAuthor
Takeshi, KanashimaAuthor
Okuyama, MasanoriAuthor
Year2009 (August 14)Volume55
Issue2
PublisherKorean Physical Society
DOIdoi:10.3938/jkps.55.884Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID11236095Long-form Identifiermindat:1:5:11236095:9
GUID0
Full ReferenceHai, Le Van, Takeshi, Kanashima, Okuyama, Masanori (2009) Enhancement of Memory Retention Time of Metal/Ferroelectric/Insulator/Semiconductor Structure by Using Fast Annealing and Nitrogen Radical Irradiation. Journal of the Korean Physical Society, 55 (2). 884-887 doi:10.3938/jkps.55.884
Plain TextHai, Le Van, Takeshi, Kanashima, Okuyama, Masanori (2009) Enhancement of Memory Retention Time of Metal/Ferroelectric/Insulator/Semiconductor Structure by Using Fast Annealing and Nitrogen Radical Irradiation. Journal of the Korean Physical Society, 55 (2). 884-887 doi:10.3938/jkps.55.884
In(2009, August) Journal of the Korean Physical Society Vol. 55 (2) Korean Physical Society

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Kanashima, Takeshi, Lee, Hyun, Okuyama, Masanori (2007) Preparation of HfO2 Thin Films by Using Photoassisted MOCVD and Their Characterization by Using Photoreflectance Spectroscopy. Journal of the Korean Physical Society, 51 (92). 772pp. doi:10.3938/jkps.51.772
Noda, Minoru, Kodama, Kazushi, Kitai, Satoshi, Takahashi, Mitsue, Kanashima, Takeshi, Okuyama, Masanori (2003) Basic characteristics of metal-ferroelectric-insulator-semiconductor structure using a high-k PrOx insulator layer. Journal of Applied Physics, 93 (7). 4137-4143 doi:10.1063/1.1558206
Park, Jungmin, Gotoda, Fumiya, Nakashima, Seiji, Kanashima, Takeshi, Okuyama, Masanori (2011) Preparation and Characterization of BiFeO3 Thin Film Deposited on ITO Substrate by Using Pulsed Laser Deposition. Journal of the Korean Physical Society, 59 (3). 2537-2541 doi:10.3938/jkps.59.2537
Noda, Minoru, Kodama, Kazushi, Ikeuchi, Itaru, Takahashi, Mitsue, Okuyama, Masanori (2003) A Significant Improvement in Memory Retention of Metal-Ferroelectric-Insulator-Semiconductor Structure for One Transistor-Type Ferroelectric Memory by Rapid Thermal Annealing. Japanese Journal of Applied Physics, 42. 2055-2058 doi:10.1143/jjap.42.2055
Cha, Bu-Sang, Kanashima, Takeshi, Lee, Seung-Mok, Okuyama, Masanori (2015) Air damping effect on the air-based CMUT operation. Journal of the Korean Physical Society, 67 (3). 486-495 doi:10.3938/jkps.67.486
Park, Jung Min, Sohgawa, Masayuki, Kanashima, Takeshi, Okuyama, Masanori, Nakashima, Seiji (2013) Preparation of epitaxial BiFeO3 thin films on La-SrTiO3 substrate by using magnetic-field-assisted pulsed laser deposition. Journal of the Korean Physical Society, 62 (7). 1041-1045 doi:10.3938/jkps.62.1041
Takahashi, Mitsue, Sugiyama, Hideki, Nakaiso, Toshiyuki, Kodama, Kazushi, Noda, Minoru, Okuyama, Masanori (2001) Analysis and Improvement of Retention Time of Memorized State of Metal-Ferroelectric-Insulator-Semiconductor Structure for Ferroelectric Gate FET Memory. Japanese Journal of Applied Physics, 40. 2923-2927 doi:10.1143/jjap.40.2923
Yoon, Sung-Min (2012) Working temperature dependence of metal-ferroelectric-insulator-semiconductor capacitors using a poly(vinylidene fluoride-trifluoroethylene) copolymer for nonvolatile memory applications. Journal of the Korean Physical Society, 60 (1). 65-71 doi:10.3938/jkps.60.65
YAMASHITA, Kaoru, Noda, Minoru, Yoshizaki, Tomoya, Okuyama, Masanori (2009) Sensitivity Change on Piezoelectric Ultrasonic Microsensors by Variation of Diaphragm Structures. Journal of the Korean Physical Society, 55 (2). 902-907 doi:10.3938/jkps.55.902
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