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Peng, Ruiqin, Jiao, Shujie, Li, Hongtao, Zhao, Liancheng (2015) Dark current mechanisms investigation of surface passivation InAs/GaSb photodiodes at low temperatures. Journal of Alloys and Compounds, 632. 575-579 doi:10.1016/j.jallcom.2015.01.137

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Reference TypeJournal (article/letter/editorial)
TitleDark current mechanisms investigation of surface passivation InAs/GaSb photodiodes at low temperatures
JournalJournal of Alloys and Compounds
AuthorsPeng, RuiqinAuthor
Jiao, ShujieAuthor
Li, HongtaoAuthor
Zhao, LianchengAuthor
Year2015 (May)Volume632
PublisherElsevier BV
DOIdoi:10.1016/j.jallcom.2015.01.137Search in ResearchGate
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Mindat Ref. ID11908054Long-form Identifiermindat:1:5:11908054:6
GUID0
Full ReferencePeng, Ruiqin, Jiao, Shujie, Li, Hongtao, Zhao, Liancheng (2015) Dark current mechanisms investigation of surface passivation InAs/GaSb photodiodes at low temperatures. Journal of Alloys and Compounds, 632. 575-579 doi:10.1016/j.jallcom.2015.01.137
Plain TextPeng, Ruiqin, Jiao, Shujie, Li, Hongtao, Zhao, Liancheng (2015) Dark current mechanisms investigation of surface passivation InAs/GaSb photodiodes at low temperatures. Journal of Alloys and Compounds, 632. 575-579 doi:10.1016/j.jallcom.2015.01.137
In(n.d.) Journal of Alloys and Compounds Vol. 632. Elsevier BV

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