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Chikawa, Jun-ichi, Sato, Fumio, Sunada, Tadasu (1984) Interface structure and solute trapping in rapid crystal growth of silicon and germanium from the laser-induced melt. Materials Letters, 2. 202-208 doi:10.1016/0167-577x(84)90024-7

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Reference TypeJournal (article/letter/editorial)
TitleInterface structure and solute trapping in rapid crystal growth of silicon and germanium from the laser-induced melt
JournalMaterials Letters
AuthorsChikawa, Jun-ichiAuthor
Sato, FumioAuthor
Sunada, TadasuAuthor
Year1984 (February)Volume2
PublisherElsevier BV
DOIdoi:10.1016/0167-577x(84)90024-7Search in ResearchGate
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Mindat Ref. ID12403721Long-form Identifiermindat:1:5:12403721:4
GUID0
Full ReferenceChikawa, Jun-ichi, Sato, Fumio, Sunada, Tadasu (1984) Interface structure and solute trapping in rapid crystal growth of silicon and germanium from the laser-induced melt. Materials Letters, 2. 202-208 doi:10.1016/0167-577x(84)90024-7
Plain TextChikawa, Jun-ichi, Sato, Fumio, Sunada, Tadasu (1984) Interface structure and solute trapping in rapid crystal growth of silicon and germanium from the laser-induced melt. Materials Letters, 2. 202-208 doi:10.1016/0167-577x(84)90024-7
In(n.d.) Materials Letters Vol. 2. Elsevier BV

See Also

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Sato, Fumio, Sunada, Tadasu, Chikawa, Jun-ichi (1982) Pulsed laser annealing of GaAs in a high-pressure argon gas ambience. Materials Letters, 1. 111-115 doi:10.1016/0167-577x(82)90021-0
Chikawa, Jun-ichi, Sato, Fumio (1980) Impurity Incorporation at Melt-Crystal Interfaces in Pulsed Laser Annealing of Silicon. Japanese Journal of Applied Physics, 19 (3) doi:10.1143/jjap.19.l159
Chikawa, Jun-ichi, Sato, Fumio (1994) Crystal growth of silicon from X-ray excited states of the solid. Applied Surface Science, 79. 186-195 doi:10.1016/0169-4332(94)90408-1
Jones, H. (1988) The critical concentration for formation of segregation-free solid by solute trapping during rapid solidification from the melt. Materials Letters, 6. 181-182 doi:10.1016/0167-577x(88)90097-3
Evans, G.J. (1984) Crystal growth in electric fields. Materials Letters, 2. 420-423 doi:10.1016/0167-577x(84)90153-8
Chikawa, Jun-ichi, Sato, Fumio (1980) Solid Solubilities of Group-III and Group-V Dopants in Pulsed Laser-Annealed Silicon. Japanese Journal of Applied Physics, 19 (10) doi:10.1143/jjap.19.l577
Szikora, S., Kräuter, W., Bäuerle, D. (1984) Laser-induced deposition of SiO2. Materials Letters, 2. 263-264 doi:10.1016/0167-577x(84)90126-5
Pribat, D., Mercandalli, L.M., Croset, M., Dieumegard, D., Siejka, J. (1984) Heteroepitaxial growth of silicon on (100) Yttria-Stabilized Zirconia (YSZ) and thermal oxidation of the Si-YSZ interface. Materials Letters, 2. 524-528 doi:10.1016/0167-577x(84)90087-9
Gresock, Larry R., Clapp, Mireille Treuil (1984) Effect of melt spinning on the structure and superconducting transition temperature of “Nb3Si” alloys. Materials Letters, 2. 492-496 doi:10.1016/0167-577x(84)90079-x
Banerjee, H.D., Acharya, H.N., Dutta, S.K. (1984) On the growth morphology of solar-grade polysilicon prepared by zinc reduction of silicon tetrachloride. Materials Letters, 2. 265-268 doi:10.1016/0167-577x(84)90127-7
Brantov, S.K., Epelbaum, B.M., Tatarchenko, V.A. (1984) Unidirectional growth of silicon layers on a graphitized fabric substrate. Materials Letters, 2. 274-277 doi:10.1016/0167-577x(84)90129-0
 
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