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Ruan, Dun-Bao, Liu, Po-Tsun, Gan, Kai-Jhih, Chiu, Yu-Chuan, Hsu, Chih-Chieh, Sze, Simon M. (2020) Role of tungsten dopants in indium oxide thin-film transistor on radiation hardness technology. Applied Physics Letters, 116 (18) 182104pp. doi:10.1063/1.5142557

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Reference TypeJournal (article/letter/editorial)
TitleRole of tungsten dopants in indium oxide thin-film transistor on radiation hardness technology
JournalApplied Physics Letters
AuthorsRuan, Dun-BaoAuthor
Liu, Po-TsunAuthor
Gan, Kai-JhihAuthor
Chiu, Yu-ChuanAuthor
Hsu, Chih-ChiehAuthor
Sze, Simon M.Author
Year2020 (May 4)Volume116
Issue18
PublisherAIP Publishing
DOIdoi:10.1063/1.5142557Search in ResearchGate
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Mindat Ref. ID13130147Long-form Identifiermindat:1:5:13130147:6
GUID0
Full ReferenceRuan, Dun-Bao, Liu, Po-Tsun, Gan, Kai-Jhih, Chiu, Yu-Chuan, Hsu, Chih-Chieh, Sze, Simon M. (2020) Role of tungsten dopants in indium oxide thin-film transistor on radiation hardness technology. Applied Physics Letters, 116 (18) 182104pp. doi:10.1063/1.5142557
Plain TextRuan, Dun-Bao, Liu, Po-Tsun, Gan, Kai-Jhih, Chiu, Yu-Chuan, Hsu, Chih-Chieh, Sze, Simon M. (2020) Role of tungsten dopants in indium oxide thin-film transistor on radiation hardness technology. Applied Physics Letters, 116 (18) 182104pp. doi:10.1063/1.5142557
In(2020, May) Applied Physics Letters Vol. 116 (18) AIP Publishing

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