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(2018) Enhancement of electrical parameters in solar grade monocrystalline silicon by external gettering through sacrificial silicon nanowire layer. Materials Research Bulletin, 98. 41-46 doi:10.1016/j.materresbull.2017.10.003

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TitleEnhancement of electrical parameters in solar grade monocrystalline silicon by external gettering through sacrificial silicon nanowire layer
JournalMaterials Research Bulletin
Year2018 (February)Volume98
PublisherElsevier BV
DOIdoi:10.1016/j.materresbull.2017.10.003Search in ResearchGate
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Mindat Ref. ID13492060Long-form Identifiermindat:1:5:13492060:5
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Full Reference(2018) Enhancement of electrical parameters in solar grade monocrystalline silicon by external gettering through sacrificial silicon nanowire layer. Materials Research Bulletin, 98. 41-46 doi:10.1016/j.materresbull.2017.10.003
Plain Text(2018) Enhancement of electrical parameters in solar grade monocrystalline silicon by external gettering through sacrificial silicon nanowire layer. Materials Research Bulletin, 98. 41-46 doi:10.1016/j.materresbull.2017.10.003
In(2018) Materials Research Bulletin Vol. 98. Elsevier BV

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