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Abe, Takao, Takahashi, Toru, Shirai, Koun (2019) Mechanism for generating interstitial atoms by thermal stress during silicon crystal growth. Progress in Crystal Growth and Characterization of Materials, 65 (1) 36-46 doi:10.1016/j.pcrysgrow.2019.01.001

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Reference TypeJournal (article/letter/editorial)
TitleMechanism for generating interstitial atoms by thermal stress during silicon crystal growth
JournalProgress in Crystal Growth and Characterization of Materials
AuthorsAbe, TakaoAuthor
Takahashi, ToruAuthor
Shirai, KounAuthor
Year2019 (February)Volume65
Issue1
PublisherElsevier BV
DOIdoi:10.1016/j.pcrysgrow.2019.01.001Search in ResearchGate
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Mindat Ref. ID13522035Long-form Identifiermindat:1:5:13522035:3
GUID0
Full ReferenceAbe, Takao, Takahashi, Toru, Shirai, Koun (2019) Mechanism for generating interstitial atoms by thermal stress during silicon crystal growth. Progress in Crystal Growth and Characterization of Materials, 65 (1) 36-46 doi:10.1016/j.pcrysgrow.2019.01.001
Plain TextAbe, Takao, Takahashi, Toru, Shirai, Koun (2019) Mechanism for generating interstitial atoms by thermal stress during silicon crystal growth. Progress in Crystal Growth and Characterization of Materials, 65 (1) 36-46 doi:10.1016/j.pcrysgrow.2019.01.001
In(2019, February) Progress in Crystal Growth and Characterization of Materials Vol. 65 (1) Elsevier BV

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Abe, Takao (2022) Thermal stress relaxation phenomenon through forming the interstitial region in CZ silicon pulled with rapid and slow cooling heat shields. Progress in Crystal Growth and Characterization of Materials, 68 (3) 100579 doi:10.1016/j.pcrysgrow.2022.100579
Abe, Takao, Takahashi, Toru (2011) Intrinsic point defect behavior in silicon crystals during growth from the melt: A model derived from experimental results. Journal of Crystal Growth, 334 (1). 16-36 doi:10.1016/j.jcrysgro.2011.07.027
Abe, T., Takahashi, T., Shirai, K., Zhang, X.W. (2016) Investigations of interstitial generations near growth interface depending on crystal pulling rates during CZ silicon growth by detaching from the melt. Journal of Crystal Growth, 434. 128-137 doi:10.1016/j.jcrysgro.2015.10.038
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