Vote for your favorite mineral in #MinCup25! - Jeremejevite vs. Haüyne
Are you ready for a battle of the blues? In a match of newcomers, volcanic gem hauyne is taking on rare jeremejevite.
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Dauelsberg, Martin, Talalaev, Roman (2020) Progress in Modeling of III-Nitride MOVPE. Progress in Crystal Growth and Characterization of Materials, 66 (3) 100486pp. doi:10.1016/j.pcrysgrow.2020.100486

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleProgress in Modeling of III-Nitride MOVPE
JournalProgress in Crystal Growth and Characterization of Materials
AuthorsDauelsberg, MartinAuthor
Talalaev, RomanAuthor
Year2020 (August)Volume66
Issue3
PublisherElsevier BV
DOIdoi:10.1016/j.pcrysgrow.2020.100486Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID13522057Long-form Identifiermindat:1:5:13522057:5
GUID0
Full ReferenceDauelsberg, Martin, Talalaev, Roman (2020) Progress in Modeling of III-Nitride MOVPE. Progress in Crystal Growth and Characterization of Materials, 66 (3) 100486pp. doi:10.1016/j.pcrysgrow.2020.100486
Plain TextDauelsberg, Martin, Talalaev, Roman (2020) Progress in Modeling of III-Nitride MOVPE. Progress in Crystal Growth and Characterization of Materials, 66 (3) 100486pp. doi:10.1016/j.pcrysgrow.2020.100486
In(2020, August) Progress in Crystal Growth and Characterization of Materials Vol. 66 (3) Elsevier BV

See Also

These are possibly similar items as determined by title/reference text matching only.

Prete, Paola, Lovergine, Nico (2020) Dilute nitride III-V nanowires for high-efficiency intermediate-band photovoltaic cells: Materials requirements, self-assembly methods and properties. Progress in Crystal Growth and Characterization of Materials, 66 (4) 100510pp. doi:10.1016/j.pcrysgrow.2020.100510
Dauelsberg, M., Martin, C., Protzmann, H., Boyd, A.R., Thrush, E.J., Käppeler, J., Heuken, M., Talalaev, R.A., Yakovlev, E.V., Kondratyev, A.V. (2007) Modeling and process design of III-nitride MOVPE at near-atmospheric pressure in close coupled showerhead and planetary reactors. Journal of Crystal Growth, 298. 418-424 doi:10.1016/j.jcrysgro.2006.10.046
(2018) Basic ammonothermal growth of Gallium Nitride – State of the art, challenges, perspectives. Progress in Crystal Growth and Characterization of Materials, 64 (3) 63-74 doi:10.1016/j.pcrysgrow.2018.05.001
(2006) Preface. Progress in Crystal Growth and Characterization of Materials, 52 (1) 1-3 doi:10.1016/j.pcrysgrow.2006.03.021
(2016) III-V compound semiconductors: Growth and structures. Progress in Crystal Growth and Characterization of Materials, 62 (2) 352-370 doi:10.1016/j.pcrysgrow.2016.04.019
(2019) Professor J. Brian Mullin retires as Editor-in-Chief from the journal Progress in Crystal Growth and Characterization of Materials. Progress in Crystal Growth and Characterization of Materials, 65 (3) 100453pp. doi:10.1016/j.pcrysgrow.2019.05.001
(2008) Progress in Crystal Growth and Characterization of Materials, 54 (3) Elsevier BV. 174-175 doi:10.1016/j.pcrysgrow.2008.08.001
(2012) Modeling on ammonothermal growth of GaN semiconductor crystals. Progress in Crystal Growth and Characterization of Materials, 58 (2) 61-73 doi:10.1016/j.pcrysgrow.2012.02.005
Martin, C., Dauelsberg, M., Protzmann, H., Boyd, A.R., Thrush, E.J., Heuken, M., Talalaev, R.A., Yakovlev, E.V., Kondratyev, A.V. (2007) Modelling of group-III nitride MOVPE in the closed coupled showerhead reactor and Planetary Reactor®. Journal of Crystal Growth, 303 (1). 318-322 doi:10.1016/j.jcrysgro.2006.11.151
Smith, David J. (2020) Atomic-resolution structure imaging of defects and interfaces in compound semiconductors. Progress in Crystal Growth and Characterization of Materials, 66 (4) 100498pp. doi:10.1016/j.pcrysgrow.2020.100498
(2016) Recent progress in chemical vapor deposition growth of two-dimensional transition metal dichalcogenides. Progress in Crystal Growth and Characterization of Materials, 62 (3) 9-28 doi:10.1016/j.pcrysgrow.2016.06.002
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: September 3, 2025 14:37:22
Go to top of page