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Karmakov, Y, Paskaleva, A, Spassov, D (2022) Depth profiling of very thin HfO2/Al2O3 stacks by ellipsometry. Journal of Physics: Conference Series, 2240 (1) 12049pp. doi:10.1088/1742-6596/2240/1/012049

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Reference TypeJournal (article/letter/editorial)
TitleDepth profiling of very thin HfO2/Al2O3 stacks by ellipsometry
JournalJournal of Physics: Conference Series
AuthorsKarmakov, YAuthor
Paskaleva, AAuthor
Spassov, DAuthor
Year2022 (March 1)Volume2240
Issue1
PublisherIOP Publishing
DOIdoi:10.1088/1742-6596/2240/1/012049Search in ResearchGate
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Mindat Ref. ID13532032Long-form Identifiermindat:1:5:13532032:9
GUID0
Full ReferenceKarmakov, Y, Paskaleva, A, Spassov, D (2022) Depth profiling of very thin HfO2/Al2O3 stacks by ellipsometry. Journal of Physics: Conference Series, 2240 (1) 12049pp. doi:10.1088/1742-6596/2240/1/012049
Plain TextKarmakov, Y, Paskaleva, A, Spassov, D (2022) Depth profiling of very thin HfO2/Al2O3 stacks by ellipsometry. Journal of Physics: Conference Series, 2240 (1) 12049pp. doi:10.1088/1742-6596/2240/1/012049
In(2022, March) Journal of Physics: Conference Series Vol. 2240 (1) IOP Publishing

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Karmakov, Y, Paskaleva, A, Spassov, D (2023) Interfaces in ALD very thin Al2O3/HfO2 stacks studied by ellipsometry. Journal of Physics: Conference Series, 2436 (1) 12015 doi:10.1088/1742-6596/2436/1/012015
Karmakov, Y, Spassov, D, Paskaleva, A (2024) Ellipsometry of very thin Al2O3-HfO2 stacks for nano-memory applications. Journal of Physics: Conference Series, 2710 (1) 12010 doi:10.1088/1742-6596/2710/1/012010
Spassov, D, Paskaleva, A, Stanchev, T, Ivanov, Tz (2022) Electrical characterization of memory capacitors for nonvolatile memory applications based on nanolaminated HfO2/Al2O3 and Al-doped HfO2 stacks. Journal of Physics: Conference Series, 2240 (1) 12046pp. doi:10.1088/1742-6596/2240/1/012046
Spassov, D, Paskaleva, A, Guziewicz, E, Luka, G, AKrajewski, T, Kopalko, K, Wierzbicka, A, Blagoev, B (2016) Electrical characteristics of multilayered HfO2-Al2O3 charge trapping stacks deposited by ALD. Journal of Physics: Conference Series, 764. 12016pp. doi:10.1088/1742-6596/764/1/012016
Spassov, D, Paskaleva, A, Krajewski, T A, Guziewicz, E, Ivanov, Tz (2019) Leakage currents in Al2O3/HfO2 multilayer high-k stacks and their modification by post-deposition annealing steps. Journal of Physics: Conference Series, 1186. 12025pp. doi:10.1088/1742-6596/1186/1/012025
Spassov, D, Paskaleva, A, Ivanov, Tz, Stanchev, T (2024) Characterization of program and erase speed of memory capacitors with nanolaminated HfO2/Al2O3 stacks for application in non-volatile memories. Journal of Physics: Conference Series, 2710 (1) 12027 doi:10.1088/1742-6596/2710/1/012027
(2022) Peer Review Statement. Journal of Physics: Conference Series, 2240 (1) 11002pp. doi:10.1088/1742-6596/2240/1/011002
(2022) Preface VEIT 2021. Journal of Physics: Conference Series, 2240 (1) 11001pp. doi:10.1088/1742-6596/2240/1/011001
Spassov, D, Paskaleva, A, Guziewicz, E, Stanchev, T, Ivanov, Tz (2023) Charge trapping effects in nonvolatile memory cells with HfO2/Al2O3 nanolaminated trapping layer. Journal of Physics: Conference Series, 2436 (1) 12016 doi:10.1088/1742-6596/2436/1/012016
Andreeva, R, Stoychev, D (2022) Phosphate sealing improvement of the corrosion resistance of thin cerium oxides coatings electroless deposited on aluminium. Journal of Physics: Conference Series, 2240 (1) 12001pp. doi:10.1088/1742-6596/2240/1/012001
Vachkov, V, Kiss’ovski, Zh (2022) Simulations of a capacitor with graphene electrodes. Journal of Physics: Conference Series, 2240 (1) 12036pp. doi:10.1088/1742-6596/2240/1/012036
 
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