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Ma, Xiaolei, Wang, Fei, Wei, Wei, Wu, Jixuan, Zhan, Xuepeng, Li, Yuan, Chen, Jiezhi (2020) Impacts of extra charges on trap level modulations at cSi/aSiO2 interface: correlations to leakage current recovery in oxide dielectric. Journal of Physics D: Applied Physics, 53 (24) 245103pp. doi:10.1088/1361-6463/ab8035

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Reference TypeJournal (article/letter/editorial)
TitleImpacts of extra charges on trap level modulations at cSi/aSiO2 interface: correlations to leakage current recovery in oxide dielectric
JournalJournal of Physics D: Applied Physics
AuthorsMa, XiaoleiAuthor
Wang, FeiAuthor
Wei, WeiAuthor
Wu, JixuanAuthor
Zhan, XuepengAuthor
Li, YuanAuthor
Chen, JiezhiAuthor
Year2020 (June 10)Volume53
Issue24
PublisherIOP Publishing
DOIdoi:10.1088/1361-6463/ab8035Search in ResearchGate
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Mindat Ref. ID13565596Long-form Identifiermindat:1:5:13565596:4
GUID0
Full ReferenceMa, Xiaolei, Wang, Fei, Wei, Wei, Wu, Jixuan, Zhan, Xuepeng, Li, Yuan, Chen, Jiezhi (2020) Impacts of extra charges on trap level modulations at cSi/aSiO2 interface: correlations to leakage current recovery in oxide dielectric. Journal of Physics D: Applied Physics, 53 (24) 245103pp. doi:10.1088/1361-6463/ab8035
Plain TextMa, Xiaolei, Wang, Fei, Wei, Wei, Wu, Jixuan, Zhan, Xuepeng, Li, Yuan, Chen, Jiezhi (2020) Impacts of extra charges on trap level modulations at cSi/aSiO2 interface: correlations to leakage current recovery in oxide dielectric. Journal of Physics D: Applied Physics, 53 (24) 245103pp. doi:10.1088/1361-6463/ab8035
In(2020, June) Journal of Physics D: Applied Physics Vol. 53 (24) IOP Publishing

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