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Lambrecht, Walter R. L., Segall, Benjamin (1989) Efficient direct calculation method for dielectric response in semiconductors. Physical Review B, 40 (11) 7793-7801 doi:10.1103/physrevb.40.7793

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Reference TypeJournal (article/letter/editorial)
TitleEfficient direct calculation method for dielectric response in semiconductors
JournalPhysical Review B
AuthorsLambrecht, Walter R. L.Author
Segall, BenjaminAuthor
Year1989 (October 15)Volume40
Issue11
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.40.7793Search in ResearchGate
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Mindat Ref. ID14103498Long-form Identifiermindat:1:5:14103498:2
GUID0
Full ReferenceLambrecht, Walter R. L., Segall, Benjamin (1989) Efficient direct calculation method for dielectric response in semiconductors. Physical Review B, 40 (11) 7793-7801 doi:10.1103/physrevb.40.7793
Plain TextLambrecht, Walter R. L., Segall, Benjamin (1989) Efficient direct calculation method for dielectric response in semiconductors. Physical Review B, 40 (11) 7793-7801 doi:10.1103/physrevb.40.7793
In(1989, October) Physical Review B Vol. 40 (11) American Physical Society (APS)

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Rashkeev, Sergey N., Lambrecht, Walter R. L., Segall, Benjamin (1998) Efficientab initiomethod for the calculation of frequency-dependent second-order optical response in semiconductors. Physical Review B, 57 (7) 3905-3919 doi:10.1103/physrevb.57.3905
Lambrecht, Walter R. L., Segall, Benjamin (1989) Electronic structure of (diamond C)/(sphalerite BN) (110) interfaces and superlattices. Physical Review B, 40 (14) 9909-9919 doi:10.1103/physrevb.40.9909
Rashkeev, Sergey N., Lambrecht, Walter R. L., Segall, Benjamin (1998) Second-harmonic generation in SiC polytypes. Physical Review B, 57 (16) 9705-9715 doi:10.1103/physrevb.57.9705
Lambrecht, Walter R. L., Segall, Benjamin (1990) Interface dependence of band offsets in lattice-matched isovalent heterojunctions. Physical Review B, 41 (12) 8353-8358 doi:10.1103/physrevb.41.8353
Lambrecht, Walter R. L., Segall, Benjamin (1995) Band-structure analysis of the conduction-band mass anisotropy in 6Hand 4HSiC. Physical Review B, 52 (4) doi:10.1103/physrevb.52.r2249
Lambrecht, Walter R. L., Segall, Benjamin (1990) Electronic-structure study of the (110) inversion domain boundary in SiC. Physical Review B, 41 (5) 2948-2958 doi:10.1103/physrevb.41.2948
Lambrecht, Walter R. L., Segall, Benjamin (1990) Erratum: Electronic-structure study of the (110) inversion domain boundary in SiC. Physical Review B, 42 (2) 1462 doi:10.1103/physrevb.42.1462.3
Lambrecht, Walter R. L., Segall, Benjamin (1991) Electronic structure and bonding at SiC/AlN and SiC/BP interfaces. Physical Review B, 43 (9) 7070-7085 doi:10.1103/physrevb.43.7070
Amador, Carlos, Lambrecht, Walter R. L., Segall, Benjamin (1992) Application of generalized gradient-corrected density functionals to iron. Physical Review B, 46 (3) 1870-1873 doi:10.1103/physrevb.46.1870
Lambrecht, Walter R. L., Segall, Benjamin (1993) Anomalous band-gap behavior and phase stability ofc-BN–diamond alloys. Physical Review B, 47 (15) 9289-9296 doi:10.1103/physrevb.47.9289
Kim, Kwiseon, Lambrecht, Walter R. L., Segall, Benjamin (1994) Electronic structure of GaN with strain and phonon distortions. Physical Review B, 50 (3) 1502-1505 doi:10.1103/physrevb.50.1502
 
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