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Simonian, A. W., Sproul, A. B., Shi, Z., Gauja, E. (1995) Observation of Fano resonance in heavily dopedp-type silicon at room temperature. Physical Review B, 52 (8) 5672-5674 doi:10.1103/physrevb.52.5672

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Reference TypeJournal (article/letter/editorial)
TitleObservation of Fano resonance in heavily dopedp-type silicon at room temperature
JournalPhysical Review B
AuthorsSimonian, A. W.Author
Sproul, A. B.Author
Shi, Z.Author
Gauja, E.Author
Year1995 (August 15)Volume52
Issue8
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.52.5672Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14131738Long-form Identifiermindat:1:5:14131738:2
GUID0
Full ReferenceSimonian, A. W., Sproul, A. B., Shi, Z., Gauja, E. (1995) Observation of Fano resonance in heavily dopedp-type silicon at room temperature. Physical Review B, 52 (8) 5672-5674 doi:10.1103/physrevb.52.5672
Plain TextSimonian, A. W., Sproul, A. B., Shi, Z., Gauja, E. (1995) Observation of Fano resonance in heavily dopedp-type silicon at room temperature. Physical Review B, 52 (8) 5672-5674 doi:10.1103/physrevb.52.5672
In(1995, August) Physical Review B Vol. 52 (8) American Physical Society (APS)

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Wagner, J., Viña, L. (1984) Radiative recombination in heavily dopedp-type germanium. Physical Review B, 30 (12) 7030-7036 doi:10.1103/physrevb.30.7030
Kizuka, Tokushi (2001) Direct atomistic observation of a contact process between crystalline silicon surfaces at room temperature. Physical Review B, 63 (3) doi:10.1103/physrevb.63.033309
Chawla, Santa, Jayanthi, K., Kotnala, R. K. (2009) Room-temperature ferromagnetism in Li-dopedp-type luminescent ZnO nanorods. Physical Review B, 79 (12) doi:10.1103/physrevb.79.125204
Wagner, Joachim, Cardona, Manuel (1985) Electronic Raman scattering in heavily dopedp-type germanium. Physical Review B, 32 (12) 8071-8077 doi:10.1103/physrevb.32.8071
Crosby, C. R., Grenier, C. G. (1971) Thermal Conductivity of Heavily Dopedp-Type InSb at Liquid-Helium Temperatures. Physical Review B, 4 (4) 1258-1266 doi:10.1103/physrevb.4.1258
Kaneto, T., Kim, K. W., Littlejohn, M. A. (1993) Calculation of minority-carrier mobilities in heavily dopedp-type semiconductors in the dielectric-function formalism. Physical Review B, 47 (24) 16257-16266 doi:10.1103/physrevb.47.16257
Meng, Yuan, Lapeyre, G. J. (1992) Temperature dependence of high-resolution electron-energy-loss spectroscopy of the hole plasmon at heavily dopedp-type GaAs(110) surfaces. Physical Review B, 45 (3) 1500-1503 doi:10.1103/physrevb.45.1500
Fjeldly, Tor A., Cerdeira, Fernando, Cardona, Manuel (1973) Effects of Free Carriers on Zone-Center Vibrational Modes in Heavily Dopedp-type Si. I. Acoustical Modes. Physical Review B, 8 (10) 4723-4733 doi:10.1103/physrevb.8.4723
Cerdeira, Fernando, Fjeldly, T. A., Cardona, M. (1973) Effect of Free Carriers on Zone-Center Vibrational Modes in Heavily Dopedp-type Si. II. Optical Modes. Physical Review B, 8 (10) 4734-4745 doi:10.1103/physrevb.8.4734
Kveder, V. V., Steinman, E. A., Shevchenko, S. A., Grimmeiss, H. G. (1995) Dislocation-related electroluminescence at room temperature in plastically deformed silicon. Physical Review B, 51 (16) 10520-10526 doi:10.1103/physrevb.51.10520
dell’Orto, Tiziana, Di Ventra, M., Almeida, J., Coluzza, C., Margaritondo, G. (1995) Evidence for a photocurrent Fano resonance in an artificial nanostructure. Physical Review B, 52 (4) doi:10.1103/physrevb.52.r2265
 
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