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Devine, N. F. M., Robertson, J., Girault, V., Devine, R. A. B. (2000) Dispersive transport of protons in oxides confined inSi/SiO2/Sistructures. Physical Review B, 61 (23) 15565-15568 doi:10.1103/physrevb.61.15565

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Reference TypeJournal (article/letter/editorial)
TitleDispersive transport of protons in oxides confined inSi/SiO2/Sistructures
JournalPhysical Review B
AuthorsDevine, N. F. M.Author
Robertson, J.Author
Girault, V.Author
Devine, R. A. B.Author
Year2000 (June 15)Volume61
Issue23
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.61.15565Search in ResearchGate
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Mindat Ref. ID14152089Long-form Identifiermindat:1:5:14152089:8
GUID0
Full ReferenceDevine, N. F. M., Robertson, J., Girault, V., Devine, R. A. B. (2000) Dispersive transport of protons in oxides confined inSi/SiO2/Sistructures. Physical Review B, 61 (23) 15565-15568 doi:10.1103/physrevb.61.15565
Plain TextDevine, N. F. M., Robertson, J., Girault, V., Devine, R. A. B. (2000) Dispersive transport of protons in oxides confined inSi/SiO2/Sistructures. Physical Review B, 61 (23) 15565-15568 doi:10.1103/physrevb.61.15565
In(2000, June) Physical Review B Vol. 61 (23) American Physical Society (APS)

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Devine, R. A. B., Herrera, G. V. (2001) Electric-field-induced transport of protons in amorphousSiO2. Physical Review B, 63 (23) doi:10.1103/physrevb.63.233406
Fiori, C., Devine, R. A. B. (1986) Evidence for a wide continuum of polymorphs ina-SiO2. Physical Review B, 33 (4) 2972-2974 doi:10.1103/physrevb.33.2972
Devine, R. A. B., Francou, J.-M. (1990) Extrinsic- and intrinsic-defect creation in amorphousSiO2. Physical Review B, 41 (18) 12882-12887 doi:10.1103/physrevb.41.12882
Cornut, B., Genicon, J. L., Devine, R. A. B., Holtzberg, F. (1978) Hydrostatic pressure dependence of the susceptibility in PrS. Physical Review B, 17 (11) 4474-4476 doi:10.1103/physrevb.17.4474
Devine, R. A. B., Capponi, J. J., Arndt, J. (1987) Oxygen-diffusion kinetics in densified, amorphousSiO2. Physical Review B, 35 (2) 770-773 doi:10.1103/physrevb.35.770
Devine, R. A. B., Dixon, J. M. (1973) Conduction-Electron Contribution to Electric Field Gradients in Rare-Earth Metals. Physical Review B, 7 (11) 4902-4907 doi:10.1103/physrevb.7.4902
Tanatar, M. A., Kagoshima, S., Ishiguro, T., Ito, H., Yefanov, V. S., Bondarenko, V. A., Kushch, N. D., Yagubskii, E. B. (2000) Electronic transport properties and structural transformations ofκ−(BEDT−TTF)2Cu[N(CN)2]I. Physical Review B, 62 (23) 15561-15568 doi:10.1103/physrevb.62.15561
Devine, R. A. B. (1989) Defect Creation and Two-Photon Absorption in Amorphous SiO2. Physical Review Letters, 62 (3). 340 doi:10.1103/physrevlett.62.340
Devine, R. A. B., Arndt, J. (1990) Defect pair creation through ultraviolet radiation in dense, amorphousSiO2. Physical Review B, 42 (4) 2617-2620 doi:10.1103/physrevb.42.2617
Devine, R. A. B., Arndt, J. (1987) Si—O bond-length modification in pressure-densified amorphousSiO2. Physical Review B, 35 (17) 9376-9379 doi:10.1103/physrevb.35.9376
Helman, J. S., Devine, R. A. B. (1972) Model Structure Factor for Solid Metals. Physical Review B, 6 (4) 1607-1608 doi:10.1103/physrevb.6.1607
 
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