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Takeuchi, Noboru (2000) First-principles calculations of theSi(110)(2×3)Sbsurface. Physical Review B, 61 (24) 16704-16707 doi:10.1103/physrevb.61.16704

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Reference TypeJournal (article/letter/editorial)
TitleFirst-principles calculations of theSi(110)(2×3)Sbsurface
JournalPhysical Review B
AuthorsTakeuchi, NoboruAuthor
Year2000 (June 15)Volume61
Issue24
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.61.16704Search in ResearchGate
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Mindat Ref. ID14152227Long-form Identifiermindat:1:5:14152227:4
GUID0
Full ReferenceTakeuchi, Noboru (2000) First-principles calculations of theSi(110)(2×3)Sbsurface. Physical Review B, 61 (24) 16704-16707 doi:10.1103/physrevb.61.16704
Plain TextTakeuchi, Noboru (2000) First-principles calculations of theSi(110)(2×3)Sbsurface. Physical Review B, 61 (24) 16704-16707 doi:10.1103/physrevb.61.16704
In(2000, June) Physical Review B Vol. 61 (24) American Physical Society (APS)

See Also

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Takeuchi, Noboru (1998) First-principles calculations of theSi(111)−c(2×8)surface. Physical Review B, 57 (11) 6255-6257 doi:10.1103/physrevb.57.6255
Cocoletzi, Gregorio H., Takeuchi, Noboru (2000) First-principles calculations of the growth of InSb on GaSb(110) Physical Review B, 61 (23) 15581-15584 doi:10.1103/physrevb.61.15581
Romero, M. T., Rodriguez, J. A., Takeuchi, Noboru (2001) First-principles calculations of the adsorption of S on theSi(001)c(4×2)surface. Physical Review B, 64 (7) doi:10.1103/physrevb.64.075317
Takeuchi, Noboru (2001) First-principles calculations of the atomic structure of the In-inducedSi(001)−(4×3)reconstruction. Physical Review B, 63 (24) doi:10.1103/physrevb.63.245325
Rodríguez, J. A., Takeuchi, Noboru (2001) First-principles calculations of the adsorption of a single monolayer of GaAs on Si(110) Physical Review B, 64 (20) doi:10.1103/physrevb.64.205315
Takeuchi, Noboru (2002) First-principles calculations of the ground-state properties and stability of ScN. Physical Review B, 65 (4) doi:10.1103/physrevb.65.045204
González-Méndez, M. E., Takeuchi, Noboru (1998) First-principles calculations of the initial growth of Pb on Si(100) Physical Review B, 58 (24) 16172-16176 doi:10.1103/physrevb.58.16172
Takeuchi, Noboru (1996) Structure determination of a Sb monolayer on Ge(111) from first-principles calculations. Physical Review B, 53 (12) 7996-8000 doi:10.1103/physrevb.53.7996
Takeuchi, Noboru, Selloni, A., Shkrebtii, A. I., Tosatti, E. (1991) Structural and electronic properties of the (111)2×1 surface of Ge from first-principles calculations. Physical Review B, 44 (24) 13611-13617 doi:10.1103/physrevb.44.13611
Takeuchi, Noboru, Cocoletzi, Gregorio H. (2007) First-principles calculations of the structural properties ofScSi2and the formation ofScSi2−xon the Si(111) surface. Physical Review B, 76 (3) doi:10.1103/physrevb.76.035333
Takeuchi, Noboru, Chan, C. T., Ho, K. M. (1989) First-principles calculations of equilibrium ground-state properties of Au and Ag. Physical Review B, 40 (3) 1565-1570 doi:10.1103/physrevb.40.1565
 
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