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Janotti, A., Wei, Su-Huai, Zhang, S. B., Kurtz, Sarah (2001) Structural and electronic properties ofZnGeAs2. Physical Review B, 63 (19) doi:10.1103/physrevb.63.195210

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Reference TypeJournal (article/letter/editorial)
TitleStructural and electronic properties ofZnGeAs2
JournalPhysical Review B
AuthorsJanotti, A.Author
Wei, Su-HuaiAuthor
Zhang, S. B.Author
Kurtz, SarahAuthor
Year2001 (May 1)Volume63
Issue19
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.63.195210Search in ResearchGate
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Mindat Ref. ID14156543Long-form Identifiermindat:1:5:14156543:1
GUID0
Full ReferenceJanotti, A., Wei, Su-Huai, Zhang, S. B., Kurtz, Sarah (2001) Structural and electronic properties ofZnGeAs2. Physical Review B, 63 (19) doi:10.1103/physrevb.63.195210
Plain TextJanotti, A., Wei, Su-Huai, Zhang, S. B., Kurtz, Sarah (2001) Structural and electronic properties ofZnGeAs2. Physical Review B, 63 (19) doi:10.1103/physrevb.63.195210
In(2001, April) Physical Review B Vol. 63 (19) American Physical Society (APS)

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Carrier, Pierre, Wei, Su-Huai, Zhang, S. B., Kurtz, Sarah (2005) Evolution of structural properties and formation of N-N split interstitials inGaAs1−xNxalloys. Physical Review B, 71 (16) doi:10.1103/physrevb.71.165212
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