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Palinginis, Kimon C., Cohen, J. David, Guha, Subhendu, Yang, Jeffrey C. (2001) Experimental evidence indicating a global mechanism for light-induced degradation in hydrogenated amorphous silicon. Physical Review B, 63 (20) doi:10.1103/physrevb.63.201203

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Reference TypeJournal (article/letter/editorial)
TitleExperimental evidence indicating a global mechanism for light-induced degradation in hydrogenated amorphous silicon
JournalPhysical Review B
AuthorsPalinginis, Kimon C.Author
Cohen, J. DavidAuthor
Guha, SubhenduAuthor
Yang, Jeffrey C.Author
Year2001 (May 7)Volume63
Issue20
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.63.201203Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14156661Long-form Identifiermindat:1:5:14156661:2
GUID0
Full ReferencePalinginis, Kimon C., Cohen, J. David, Guha, Subhendu, Yang, Jeffrey C. (2001) Experimental evidence indicating a global mechanism for light-induced degradation in hydrogenated amorphous silicon. Physical Review B, 63 (20) doi:10.1103/physrevb.63.201203
Plain TextPalinginis, Kimon C., Cohen, J. David, Guha, Subhendu, Yang, Jeffrey C. (2001) Experimental evidence indicating a global mechanism for light-induced degradation in hydrogenated amorphous silicon. Physical Review B, 63 (20) doi:10.1103/physrevb.63.201203
In(2001, May) Physical Review B Vol. 63 (20) American Physical Society (APS)

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Chen, Chih-Chiang, Zhong, Fan, Cohen, J. David, Yang, Jeffrey C., Guha, Subhendu (1998) Evidence for charged defects in intrinsic glow-discharge hydrogenated amorphous-silicon–germanium alloys. Physical Review B, 57 (8) doi:10.1103/physrevb.57.r4210
Tsu, David V., Chao, Benjamin S., Ovshinsky, Stanford R., Jones, Scott J., Yang, Jeffrey, Guha, Subhendu, Tsu, Raphael (2001) Heterogeneity in hydrogenated silicon: Evidence for intermediately ordered chainlike objects. Physical Review B, 63 (12) doi:10.1103/physrevb.63.125338
Cohen, J.David, Heath, Jennifer, Palinginis, Kimon, Yang, Jeffrey C, Guha, Subhendu (2002) Insights into the mechanisms of light-induced degradation from studies of defects in low Ge fraction a-Si,Ge:H alloys. Journal of Non-Crystalline Solids, 299. 449-454 doi:10.1016/s0022-3093(01)01172-3
Halverson, Adam F., Gutierrez, James J., Cohen, J. David, Yan, Baojie, Yang, Jeffrey, Guha, Subhendu (2006) Electronic characterization and effects of light-induced degradation on hydrogenated nanocrystalline silicon. Applied Physics Letters, 88 (7). 71920pp. doi:10.1063/1.2175480
Palinginis, Kimon C, Cohen, J.David, Yang, Jeffrey C, Guha, Subhendu (2000) Defect bands in a-Si–Ge:H alloys with low Ge content. Journal of Non-Crystalline Solids, 266. 665-669 doi:10.1016/s0022-3093(00)00016-8
Guha, S., Huang, C.-Y., Hudgens, S. J. (1984) Energy distribution of light-induced gap states in hydrogenated amorphous-silicon alloys. Physical Review B, 29 (10) 5995-5998 doi:10.1103/physrevb.29.5995
Palinginis, Kimon C., David Cohen, J., Ilie, A., Conway, N.M.J., Milne, W.I. (2000) Defect band distributions in hydrogenated tetrahedral amorphous carbon/crystalline silicon heterostructures. Journal of Non-Crystalline Solids, 266. 1077-1081 doi:10.1016/s0022-3093(99)00906-0
Lubianiker, Yoram, Cohen, J. David, Jin, Hyun-Chul, Abelson, John R. (1999) Effect of embedded microcrystallites on the light-induced degradation of hydrogenated amorphous silicon. Physical Review B, 60 (7) 4434-4437 doi:10.1103/physrevb.60.4434
Yue, Guozhen, Yan, Baojie, Yang, Jeffrey, Guha, Subhendu (2005) Enhancement of light-induced degradation under reverse bias in hydrogenated nanocrystalline silicon solar cells. Journal of Applied Physics, 98 (7). 74902pp. doi:10.1063/1.2060963
McCarthy, Michael J., Reimer, Jeffrey A. (1987) Light-induced changes of phosphorus bonding configurations in hydrogenated amorphous silicon. Physical Review B, 36 (8) 4525-4527 doi:10.1103/physrevb.36.4525
Jackson, W. B., Kakalios, J. (1988) Evidence for hydrogen motion in annealing of light-induced metastable defects in hydrogenated amorphous silicon. Physical Review B, 37 (2) 1020-1023 doi:10.1103/physrevb.37.1020
 
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