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Zhang, Yong, Mascarenhas, Angelo, Wang, Lin-Wang (2001) Dependence of the band structure on the order parameter for partially orderedGaxIn1−xPalloys. Physical Review B, 63 (20) doi:10.1103/physrevb.63.201312

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Reference TypeJournal (article/letter/editorial)
TitleDependence of the band structure on the order parameter for partially orderedGaxIn1−xPalloys
JournalPhysical Review B
AuthorsZhang, YongAuthor
Mascarenhas, AngeloAuthor
Wang, Lin-WangAuthor
Year2001 (May 7)Volume63
Issue20
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.63.201312Search in ResearchGate
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Mindat Ref. ID14156674Long-form Identifiermindat:1:5:14156674:2
GUID0
Full ReferenceZhang, Yong, Mascarenhas, Angelo, Wang, Lin-Wang (2001) Dependence of the band structure on the order parameter for partially orderedGaxIn1−xPalloys. Physical Review B, 63 (20) doi:10.1103/physrevb.63.201312
Plain TextZhang, Yong, Mascarenhas, Angelo, Wang, Lin-Wang (2001) Dependence of the band structure on the order parameter for partially orderedGaxIn1−xPalloys. Physical Review B, 63 (20) doi:10.1103/physrevb.63.201312
In(2001, May) Physical Review B Vol. 63 (20) American Physical Society (APS)

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Smith, S., Zhang, Yong, Mascarenhas, A., Hanna, M. (2004) Effects of localization on the excitonic linewidth in partially orderedGaxIn1−xPalloys. Physical Review B, 70 (23) doi:10.1103/physrevb.70.235301
Zhang, Yong, Mascarenhas, Angelo, Wang, Lin-Wang (2001) Statistical aspects of electronic and structural properties in partially ordered semiconductor alloys. Physical Review B, 64 (12) doi:10.1103/physrevb.64.125207
Zhang, Yong, Mascarenhas, A., Wang, L.-W. (2008) Interplay of alloying and ordering on the electronic structure ofGaxIn1−xPalloys. Physical Review B, 78 (23) doi:10.1103/physrevb.78.235202
Smith, S., Mascarenhas, A., Ahrenkiel, S. P., Hanna, M. C., Olson, J. M. (2003) Spatially resolved below-gap emission in partially orderedGaxIn1−xPalloys. Physical Review B, 68 (3) doi:10.1103/physrevb.68.035310
Zhang, Yong, Mascarenhas, Angelo, Wang, Lin-Wang (2002) Band alignment between GaAs and partially ordered GaInP. Applied Physics Letters, 80 (17). 3111-3113 doi:10.1063/1.1472478
Zhang, Yong, Fluegel, B., Hanna, M. C., Mascarenhas, A., Wang, Lin-Wang, Wang, Y. J., Wei, X. (2003) Impurity perturbation to the host band structure and recoil of the impurity state. Physical Review B, 68 (7) doi:10.1103/physrevb.68.075210
Wang, Yong, Chen, Wei-Qiang, Zhang, Fu-Chun (2014) Dynamics of the order parameter in a photoexcited Peierls chain. Physical Review B, 90 (20) doi:10.1103/physrevb.90.205110
Zhang, Yong, Mascarenhas, A., Xin, H. P., Tu, C. W. (2001) Scaling of band-gap reduction in heavily nitrogen doped GaAs. Physical Review B, 63 (16) doi:10.1103/physrevb.63.161303
Zhang, Yong, Mascarenhas, A., Smith, S., Geisz, J. F., Olson, J. M., Hanna, M. (2000) Effects of spontaneous ordering and alloy statistical fluctuations on exciton linewidth inGaxIn1−xPalloys. Physical Review B, 61 (15) 9910-9912 doi:10.1103/physrevb.61.9910
Cheong, Hyeonsik M., Zhang, Yong, Mascarenhas, Angelo, Geisz, John F. (2000) Nitrogen-induced levels inGaAs1−xNxstudied with resonant Raman scattering. Physical Review B, 61 (20) 13687-13690 doi:10.1103/physrevb.61.13687
Fluegel, B., Zhang, Y., Cheong, H. M., Mascarenhas, A., Geisz, J. F., Olson, J. M., Duda, A. (1997) Exciton absorption bleaching studies in orderedGaxIn1−xP. Physical Review B, 55 (20) 13647-13650 doi:10.1103/physrevb.55.13647
 
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