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Wedekind, J., Vollmer, H., Labusch, R. (2001) TetrahedralMni4cluster in silicon. Physical Review B, 63 (23) doi:10.1103/physrevb.63.233202

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Reference TypeJournal (article/letter/editorial)
TitleTetrahedralMni4cluster in silicon
JournalPhysical Review B
AuthorsWedekind, J.Author
Vollmer, H.Author
Labusch, R.Author
Year2001 (May 10)Volume63
Issue23
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.63.233202Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14156956Long-form Identifiermindat:1:5:14156956:9
GUID0
Full ReferenceWedekind, J., Vollmer, H., Labusch, R. (2001) TetrahedralMni4cluster in silicon. Physical Review B, 63 (23) doi:10.1103/physrevb.63.233202
Plain TextWedekind, J., Vollmer, H., Labusch, R. (2001) TetrahedralMni4cluster in silicon. Physical Review B, 63 (23) doi:10.1103/physrevb.63.233202
In(2001, May) Physical Review B Vol. 63 (23) American Physical Society (APS)

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Martin, J., Wedekind, J., Vollmer, H., Labusch, R. (2000) EPR investigation of manganese clusters in silicon. Physical Review B, 61 (3) 1918-1923 doi:10.1103/physrevb.61.1918
Hoffmann, K, Vollmer, H, Labusch, R (1997) Magnetic moments of substitutional gold in silicon. Journal of Physics: Condensed Matter, 9 (23). 4909-4915 doi:10.1088/0953-8984/9/23/014
Krüssmann, R., Vollmer, H., Labusch, R. (1983) The Activation Energy of Phosphorus Donors in Silicon-Rich Silicon–Germanium Alloys. physica status solidi (b), 118 (1). 275-282 doi:10.1002/pssb.2221180133
Finkemeier, Frank, von Niessen, Wolfgang (2001) Boson peak in amorphous silicon: A numerical study. Physical Review B, 63 (23) doi:10.1103/physrevb.63.235204
Kreissl, J., Gehlhoff, W., Vollmer, H. (1994) Trigonal manganese cluster in silicon: An electron-paramagnetic-resonance study. Physical Review B, 49 (15) 10307-10317 doi:10.1103/physrevb.49.10307
Effey-Schwickert, B., Wiegand, M., Vollmer, H., Labusch, R. (2003) Nickel in silicon studied by electron paramagnetic resonance. Applied Physics A, 77. 711-716 doi:10.1007/s00339-002-1891-9
Szymanska, M. H., Littlewood, P. B., Needs, R. J. (2001) Excitons in T-shaped quantum wires. Physical Review B, 63 (20) doi:10.1103/physrevb.63.205317
Kobitski, A. Yu., Zhuravlev, K. S., Wagner, H. P., Zahn, D. R. T. (2001) Self-trapped exciton recombination in silicon nanocrystals. Physical Review B, 63 (11) doi:10.1103/physrevb.63.115423
Schröter, W., Labusch, R., Haasen, P. (1977) Comment on "Electronic effects on dislocation velocities in heavily doped silicon" by J. R. Patel, L. R. Testardi, and P. E. Freeland. Physical Review B, 15 (8) 4121-4123 doi:10.1103/physrevb.15.4121
Bahnsen, R., Eckstein, H., Schattke, W., Fitzer, N., Redmer, R. (2001) Variational quantum Monte Carlo calculations for solid surfaces. Physical Review B, 63 (23) doi:10.1103/physrevb.63.235415
Devine, R. A. B., Herrera, G. V. (2001) Electric-field-induced transport of protons in amorphousSiO2. Physical Review B, 63 (23) doi:10.1103/physrevb.63.233406
 
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