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Neogi, A., Yoshida, H., Wada, O. (2001) Effect of thermally induced charged-carrier transfer on near-infrared intersubband transitions inInxGa1−xAs/AlAs/AlyAs1−ySb/InPcoupled quantum-well structure. Physical Review B, 63 (23) doi:10.1103/physrevb.63.235320

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Reference TypeJournal (article/letter/editorial)
TitleEffect of thermally induced charged-carrier transfer on near-infrared intersubband transitions inInxGa1−xAs/AlAs/AlyAs1−ySb/InPcoupled quantum-well structure
JournalPhysical Review B
AuthorsNeogi, A.Author
Yoshida, H.Author
Wada, O.Author
Year2001 (May 31)Volume63
Issue23
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.63.235320Search in ResearchGate
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Mindat Ref. ID14157021Long-form Identifiermindat:1:5:14157021:3
GUID0
Full ReferenceNeogi, A., Yoshida, H., Wada, O. (2001) Effect of thermally induced charged-carrier transfer on near-infrared intersubband transitions inInxGa1−xAs/AlAs/AlyAs1−ySb/InPcoupled quantum-well structure. Physical Review B, 63 (23) doi:10.1103/physrevb.63.235320
Plain TextNeogi, A., Yoshida, H., Wada, O. (2001) Effect of thermally induced charged-carrier transfer on near-infrared intersubband transitions inInxGa1−xAs/AlAs/AlyAs1−ySb/InPcoupled quantum-well structure. Physical Review B, 63 (23) doi:10.1103/physrevb.63.235320
In(2001, May) Physical Review B Vol. 63 (23) American Physical Society (APS)

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Bendayan, M., Kapon, R., Beserman, R., Sa’ar, A., Planel, R. (1997) Local modulation of the quantum-well quasicontinuum states using charged-carrier transfer induced by intersubband transitions. Physical Review B, 56 (15) 9239-9242 doi:10.1103/physrevb.56.9239
Lavon, Y., Sa’ar, A., Wang, J., Leburton, J.‐P., Julien, F. H., Planel, R. (1996) Thermally induced charged carrier transfer and intersubband transitions in an asymmetrical coupled quantum well structure. Applied Physics Letters, 69 (2). 197-199 doi:10.1063/1.117370
Wang, Lin-Wang (2001) Calculations of carrier localization inInxGa1−xN. Physical Review B, 63 (24) doi:10.1103/physrevb.63.245107
Kojima, Osamu, Kojima, Kenta, Kita, Takashi, Akahane, Kouichi (2015) Rapid dephasing related to intersubband transitions induced by exciton quantum beats observed by a pump-probe technique in a GaAs/AlAs multiple quantum well. Physical Review B, 91 (12) doi:10.1103/physrevb.91.125307
Neogi, Arup, Yoshida, Haruhiko, Mozume, Teruo, Georgiev, Nikholai, Wada, Osamu (2001) Temperature-Insensitive Intersubband-Transitions in InGaAs/AlAsSb Multiple Quantum Well Designed for Optical Communication Wavelength*. Japanese Journal of Applied Physics, 40. doi:10.1143/jjap.40.l558
Ji, G., Dobbelaere, W., Huang, D., Morkoç, H. (1989) Optical transitions involving unconfined energy states inInxGa1−xAs/GaAs multiple quantum wells. Physical Review B, 39 (5) 3216-3222 doi:10.1103/physrevb.39.3216
Baars, T., Bayer, M., Gorbunov, A. A., Forchel, A. (2001) Biexcitons inInxGa1−xAs/GaAsquantum wells subject to high magnetic fields. Physical Review B, 63 (15) doi:10.1103/physrevb.63.153312
Marcinkevičius, S., Siegert, J., Leon, R., Čechavičius, B., Magness, B., Taylor, W., Lobo, C. (2002) Changes in luminescence intensities and carrier dynamics induced by proton irradiation inInxGa1−xAs/GaAsquantum dots. Physical Review B, 66 (23) doi:10.1103/physrevb.66.235314
Müller, T., Parz, W., Strasser, G., Unterrainer, K. (2004) Influence of carrier-carrier interaction on time-dependent intersubband absorption in a semiconductor quantum well. Physical Review B, 70 (15) doi:10.1103/physrevb.70.155324
Moore, Karen J., Duggan, Geoffrey, Woodbridge, Karl, Roberts, Christine (1990) Exciton localization inInxGa1−xAs-GaAs coupled quantum-well structures. Physical Review B, 41 (2) 1095-1099 doi:10.1103/physrevb.41.1095
Sanders, G. D., Sun, C.-K., Fujimoto, J. G., Choi, H. K., Wang, C. A., Stanton, C. J. (1994) Carrier-gain dynamics inInxGa1−xAs/AlyGa1−yAs strained-layer single-quantum-well diode lasers: Comparison of theory and experiment. Physical Review B, 50 (12) 8539-8558 doi:10.1103/physrevb.50.8539
 
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