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Ishimaru, Manabu (2001) Comment on “Molecular-dynamics simulations of solid-phase epitaxy of Si: Growth mechanisms”. Physical Review B, 63 (23) doi:10.1103/physrevb.63.237401

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Reference TypeJournal (article/letter/editorial)
TitleComment on “Molecular-dynamics simulations of solid-phase epitaxy of Si: Growth mechanisms”
JournalPhysical Review B
AuthorsIshimaru, ManabuAuthor
Year2001 (May 11)Volume63
Issue23
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.63.237401Search in ResearchGate
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Mindat Ref. ID14157040Long-form Identifiermindat:1:5:14157040:4
GUID0
Full ReferenceIshimaru, Manabu (2001) Comment on “Molecular-dynamics simulations of solid-phase epitaxy of Si: Growth mechanisms”. Physical Review B, 63 (23) doi:10.1103/physrevb.63.237401
Plain TextIshimaru, Manabu (2001) Comment on “Molecular-dynamics simulations of solid-phase epitaxy of Si: Growth mechanisms”. Physical Review B, 63 (23) doi:10.1103/physrevb.63.237401
In(2001, May) Physical Review B Vol. 63 (23) American Physical Society (APS)

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Motooka, Teruaki, Nishihira, Ken, Munetoh, Shinji, Moriguchi, Koji, Shintani, Akira (2001) Reply to “Comment on ‘Molecular-dynamics simulations of solid-phase epitaxy of Si: Growth mechanisms’ ”. Physical Review B, 63 (23) doi:10.1103/physrevb.63.237402
Motooka, T., Nisihira, K., Munetoh, S., Moriguchi, K., Shintani, A. (2000) Molecular-dynamics simulations of solid-phase epitaxy of Si: Growth mechanisms. Physical Review B, 61 (12) 8537-8540 doi:10.1103/physrevb.61.8537
Belonoshko, Anatoly B. (2001) Comment on “Phase diagram of MgO from density-functional theory and molecular-dynamics simulations”. Physical Review B, 63 (9) doi:10.1103/physrevb.63.096101
Munetoh, Shinji, Moriguchi, Koji, Shintani, Akira, Nishihira, Ken, Motooka, Teruaki (2001) Molecular dynamics simulations of solid-phase epitaxy of Si: Defect formation processes. Physical Review B, 64 (19) doi:10.1103/physrevb.64.193314
Ishimaru, Manabu, Yamaguchi, Mitsuhiro, Hirotsu, Yoshihiko (2003) Molecular dynamics study of structural and dynamical properties of amorphous Si-Ge alloys. Physical Review B, 68 (23) doi:10.1103/physrevb.68.235207
Strachan, Alejandro, Çağın, Tahir, Goddard, William A. (2001) Reply to “Comment on ‘Phase diagram of MgO from density-functional theory and molecular- dynamics simulations’ ”. Physical Review B, 63 (9) doi:10.1103/physrevb.63.096102
Kohno, Kayo, Ishimaru, Manabu (2018) Molecular-dynamics simulations of solid phase epitaxy in silicon: Effects of system size, simulation time, and ensemble. Japanese Journal of Applied Physics, 57 (9) 95503 doi:10.7567/jjap.57.095503
Ishimaru, Manabu, Munetoh, Shinji, Motooka, Teruaki (1997) Generation of amorphous silicon structures by rapid quenching: A molecular-dynamics study. Physical Review B, 56 (23) 15133-15138 doi:10.1103/physrevb.56.15133
Ishimaru, Manabu, Munetoh, Shinji, Motooka, Teruaki, Moriguchi, Koji, Shintani, Akira (1998) Molecular-dynamics studies on defect-formation processes during crystal growth of silicon from melt. Physical Review B, 58 (19) 12583-12586 doi:10.1103/physrevb.58.12583
Ishimaru, Manabu, Yoshida, Kou, Kumamoto, Takashi, Motooka, Teruaki (1996) Molecular-dynamics study on atomistic structures of liquid silicon. Physical Review B, 54 (7) 4638-4641 doi:10.1103/physrevb.54.4638
Nishihira, K., Motooka, T. (2002) Molecular-dynamics simulations of crystal growth from melted Si: Self-interstitial formation and migration. Physical Review B, 66 (23) doi:10.1103/physrevb.66.233310
 
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