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Aradi, B., Gali, A., Deák, P., Lowther, J. E., Son, N. T., Janzén, E., Choyke, W. J. (2001) Ab initiodensity-functional supercell calculations of hydrogen defects in cubic SiC. Physical Review B, 63 (24) doi:10.1103/physrevb.63.245202

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Reference TypeJournal (article/letter/editorial)
TitleAb initiodensity-functional supercell calculations of hydrogen defects in cubic SiC
JournalPhysical Review B
AuthorsAradi, B.Author
Gali, A.Author
Deák, P.Author
Lowther, J. E.Author
Son, N. T.Author
Janzén, E.Author
Choyke, W. J.Author
Year2001 (May 29)Volume63
Issue24
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.63.245202Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14157079Long-form Identifiermindat:1:5:14157079:4
GUID0
Full ReferenceAradi, B., Gali, A., Deák, P., Lowther, J. E., Son, N. T., Janzén, E., Choyke, W. J. (2001) Ab initiodensity-functional supercell calculations of hydrogen defects in cubic SiC. Physical Review B, 63 (24) doi:10.1103/physrevb.63.245202
Plain TextAradi, B., Gali, A., Deák, P., Lowther, J. E., Son, N. T., Janzén, E., Choyke, W. J. (2001) Ab initiodensity-functional supercell calculations of hydrogen defects in cubic SiC. Physical Review B, 63 (24) doi:10.1103/physrevb.63.245202
In(2001, May) Physical Review B Vol. 63 (24) American Physical Society (APS)

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Gali, A., Hornos, T., Son, N. T., Janzén, E., Choyke, W. J. (2007) Ab initiosupercell calculations on aluminum-related defects in SiC. Physical Review B, 75 (4) doi:10.1103/physrevb.75.045211
Aradi, B., Deák, P., Gali, A., Son, N. T., Janzén, E. (2004) Diffusion of hydrogen in perfect,p-type doped, and radiation-damaged4H−SiC. Physical Review B, 69 (23) doi:10.1103/physrevb.69.233202
Gali, A., Deák, P., Ordejón, P., Son, N. T., Janzén, E., Choyke, W. J. (2003) Aggregation of carbon interstitials in silicon carbide: A theoretical study. Physical Review B, 68 (12) doi:10.1103/physrevb.68.125201
Gali, A., Deák, P., Rauls, E., Son, N. T., Ivanov, I. G., Carlsson, F. H. C., Janzén, E., Choyke, W. J. (2003) Correlation between the antisite pair and theDIcenter in SiC. Physical Review B, 67 (15) doi:10.1103/physrevb.67.155203
Gali, A., Aradi, B., Deák, P., Choyke, W. J., Son, N. T. (2000) Overcoordinated Hydrogens in the Carbon Vacancy: Donor Centers of SiC. Physical Review Letters, 84 (21). 4926-4929 doi:10.1103/physrevlett.84.4926
Aradi, B., Gali, A., Deák, P., Son, N.T., Janzén, E. (2001) Passivation of p-type dopants in 4H-SiC by hydrogen. Physica B: Condensed Matter, 308. 722-725 doi:10.1016/s0921-4526(01)00882-1
Aradi, B., Deák, P., Son, N. T., Janzén, E., Choyke, W. J., Devaty, R. P. (2001) Impurity-controlled dopant activation: Hydrogen-determined site selection of boron in silicon carbide. Applied Physics Letters, 79 (17). 2746-2748 doi:10.1063/1.1410337
Umeda, T., Isoya, J., Morishita, N., Ohshima, T., Kamiya, T., Gali, A., Deák, P., Son, N., Janzén, E. (2004) EPR and theoretical studies of positively charged carbon vacancy in 4H-SiC. Physical Review B, 70 (23) doi:10.1103/physrevb.70.235212
Gali, A., Deák, P., Son, N. T., Janzén, E. (2005) Possibility for the electrical activation of the carbon antisite by hydrogen inSiC. Physical Review B, 71 (3) doi:10.1103/physrevb.71.035213
Deák, Peter, Gali, Adam, Aradi, B., Son, Nguyen Tien, Janzén, Erik, Choyke, Wolfgang J. (2000) Vacancies and their Complexes with H in SiC. Materials Science Forum, 338. 817-820 doi:10.4028/www.scientific.net/msf.338-342.817
Gali, A., Hornos, T., Deák, P., Son, N. T., Janzén, E., Choyke, W. J. (2005) Activation of shallow boron acceptor in C∕B coimplanted silicon carbide: A theoretical study. Applied Physics Letters, 86 (10). 102108pp. doi:10.1063/1.1883745
 
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