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Binggeli, Nadia, Ferrara, Philippe, Baldereschi, Alfonso (2001) Band-offset trends in nitride heterojunctions. Physical Review B, 63 (24) doi:10.1103/physrevb.63.245306

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Reference TypeJournal (article/letter/editorial)
TitleBand-offset trends in nitride heterojunctions
JournalPhysical Review B
AuthorsBinggeli, NadiaAuthor
Ferrara, PhilippeAuthor
Baldereschi, AlfonsoAuthor
Year2001 (May 30)Volume63
Issue24
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.63.245306Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14157088Long-form Identifiermindat:1:5:14157088:6
GUID0
Full ReferenceBinggeli, Nadia, Ferrara, Philippe, Baldereschi, Alfonso (2001) Band-offset trends in nitride heterojunctions. Physical Review B, 63 (24) doi:10.1103/physrevb.63.245306
Plain TextBinggeli, Nadia, Ferrara, Philippe, Baldereschi, Alfonso (2001) Band-offset trends in nitride heterojunctions. Physical Review B, 63 (24) doi:10.1103/physrevb.63.245306
In(2001, May) Physical Review B Vol. 63 (24) American Physical Society (APS)

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Ferrara, Philippe, Binggeli, Nadia, Baldereschi, Alfonso (1997) Band discontinuities in zinc-blende and wurtzite AlN/SiC heterostructures. Physical Review B, 55 (12) doi:10.1103/physrevb.55.r7418
Di Ventra, M., Peressi, M., Baldereschi, A. (1996) Chemical and structural contributions to the valence-band offset at GaP/GaAs heterojunctions. Physical Review B, 54 (8) 5691-5695 doi:10.1103/physrevb.54.5691
Fall, C. J., Binggeli, N., Baldereschi, A. (2001) Theoretical maps of work-function anisotropies. Physical Review B, 65 (4) doi:10.1103/physrevb.65.045401
Zheng, Bing, Binggeli, Nadia (2010) Influence of the interface atomic structure on the magnetic and electronic properties ofLa2/3Sr1/3MnO3/SrTiO3(001)heterojunctions. Physical Review B, 82 (24) doi:10.1103/physrevb.82.245311
Rubini, S., Pelucchi, E., Lazzarino, M., Kumar, D., Franciosi, A., Berthod, C., Binggeli, N., Baldereschi, A. (2001) Ideal unreactive metal/semiconductor interfaces: The case ofZn/ZnSe(001) Physical Review B, 63 (23) doi:10.1103/physrevb.63.235307
Sgiarovello, C., Binggeli, N., Baldereschi, A. (2001) Influence of surface morphology on the Si(100) and (111) ionization potentials. Physical Review B, 64 (19) doi:10.1103/physrevb.64.195305
Binggeli, N., Baldereschi, A. (1992) Analysis of acceptor chemical shifts in Ge. Physical Review B, 45 (11) 5944-5952 doi:10.1103/physrevb.45.5944
Favot, Fabio, Dal Corso, Andrea, Baldereschi, Alfonso (2001) Ab initiostudy of CO adsorption on Ni(110): Effects on surface magnetism at low coverage. Physical Review B, 63 (11) doi:10.1103/physrevb.63.115416
Baldereschi, Alfonso, Baroni, Stefano, Resta, Raffaele (1988) Band Offsets in Lattice-Matched Heterojunctions: A Model and First-Principles Calculations for GaAs/AlAs. Physical Review Letters, 61 (6). 734-737 doi:10.1103/physrevlett.61.734
Berthod, C., Binggeli, N., Baldereschi, A. (2003) Schottky barrier heights at polar metal/semiconductor interfaces. Physical Review B, 68 (8) doi:10.1103/physrevb.68.085323
Fall, C. J., Binggeli, N., Baldereschi, A. (1998) Anomaly in the anisotropy of the aluminum work function. Physical Review B, 58 (12) doi:10.1103/physrevb.58.r7544
 
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