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Cao, J. C., Lei, X. L. (2003) Multiphoton-assisted absorption of terahertz radiation in InAs/AlSb heterojunctions. Physical Review B, 67 (8) doi:10.1103/physrevb.67.085309

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Reference TypeJournal (article/letter/editorial)
TitleMultiphoton-assisted absorption of terahertz radiation in InAs/AlSb heterojunctions
JournalPhysical Review B
AuthorsCao, J. C.Author
Lei, X. L.Author
Year2003 (February 7)Volume67
Issue8
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.67.085309Search in ResearchGate
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Mindat Ref. ID14168081Long-form Identifiermindat:1:5:14168081:3
GUID0
Full ReferenceCao, J. C., Lei, X. L. (2003) Multiphoton-assisted absorption of terahertz radiation in InAs/AlSb heterojunctions. Physical Review B, 67 (8) doi:10.1103/physrevb.67.085309
Plain TextCao, J. C., Lei, X. L. (2003) Multiphoton-assisted absorption of terahertz radiation in InAs/AlSb heterojunctions. Physical Review B, 67 (8) doi:10.1103/physrevb.67.085309
In(2003, February) Physical Review B Vol. 67 (8) American Physical Society (APS)

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Vurgaftman, I., Meyer, J. R. (2003) Spin-polarizing properties of the InAs/(AlSb)/GaMnSb/(AlSb)/InAs ferromagnetic resonant interband tunneling diode. Physical Review B, 67 (12) doi:10.1103/physrevb.67.125209
Lei, X. L., Liu, S. Y. (2003) Electron cooling due to terahertz irradiation in polar semiconductors. Physical Review B, 67 (23) doi:10.1103/physrevb.67.233301
Zhang, C., Cao, J. C. (2004) Calculation of the nonlinear free-carrier absorption of terahertz radiation in semiconductor heterostructures. Physical Review B, 70 (19) doi:10.1103/physrevb.70.193311
Fujita, M., Toyoda, T., Cao, J. C., Zhang, C. (2003) Induced charge-density oscillation under a quantizing magnetic field and intense terahertz radiation. Physical Review B, 67 (7) doi:10.1103/physrevb.67.075105
Suzuki, Kyoichi, Miyashita, Sen, Hirayama, Yoshiro (2003) Transport properties in asymmetric InAs/AlSb/GaSb electron-hole hybridized systems. Physical Review B, 67 (19) doi:10.1103/physrevb.67.195319
Cao, J. C. (2003) Interband Impact Ionization and Nonlinear Absorption of Terahertz Radiation in Semiconductor Heterostructures. Physical Review Letters, 91 (23). doi:10.1103/physrevlett.91.237401
Lin-Chung, P. J., Yang, M. J. (1993) Subband structures of strained AlSb/InAs/AlSb quantum wells. Physical Review B, 48 (8) 5338-5344 doi:10.1103/physrevb.48.5338
Genoe, J., Fobelets, K., Van Hoof, C., Borghs, G. (1995) In-plane dispersion relations of InAs/AlSb/GaSb/AlSb/InAs interband resonant-tunneling diodes. Physical Review B, 52 (19) 14025-14034 doi:10.1103/physrevb.52.14025
Genoe, J., Fobelets, K., Van Hoof, C., Borghs, G. (1996) Erratum: In-plane dispersion relations of InAs/AlSb/GaSb/AlSb/InAs interband resonant-tunneling diodes. Physical Review B, 53 (19) 13194 doi:10.1103/physrevb.53.13194
Cao, J. C., Liu, H. C., Lei, X. L., Perera, A. G. U. (2001) Chaotic dynamics in terahertz-driven semiconductors with negative effective mass. Physical Review B, 63 (11) doi:10.1103/physrevb.63.115308
Ma, Pui Wai, Wang, Jian (2004) Dynamical conductance through InAs/GaSb/InAs and InAs/AlSb/GaSb/AlSb/InAs structures. Physical Review B, 69 (12) doi:10.1103/physrevb.69.125308
 
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