Yeom, H. W., Kim, J. W., Tono, K., Matsuda, I., Ohta, T. (2003) Electronic structure of monolayer and double-layer Ge on Si(001) Physical Review B, 67 (8) doi:10.1103/physrevb.67.085310
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | Electronic structure of monolayer and double-layer Ge on Si(001) | ||
Journal | Physical Review B | ||
Authors | Yeom, H. W. | Author | |
Kim, J. W. | Author | ||
Tono, K. | Author | ||
Matsuda, I. | Author | ||
Ohta, T. | Author | ||
Year | 2003 (February 18) | Volume | 67 |
Issue | 8 | ||
Publisher | American Physical Society (APS) | ||
DOI | doi:10.1103/physrevb.67.085310Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 14168082 | Long-form Identifier | mindat:1:5:14168082:0 |
GUID | 0 | ||
Full Reference | Yeom, H. W., Kim, J. W., Tono, K., Matsuda, I., Ohta, T. (2003) Electronic structure of monolayer and double-layer Ge on Si(001) Physical Review B, 67 (8) doi:10.1103/physrevb.67.085310 | ||
Plain Text | Yeom, H. W., Kim, J. W., Tono, K., Matsuda, I., Ohta, T. (2003) Electronic structure of monolayer and double-layer Ge on Si(001) Physical Review B, 67 (8) doi:10.1103/physrevb.67.085310 | ||
In | (2003, February) Physical Review B Vol. 67 (8) American Physical Society (APS) |
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