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Mizuochi, N., Yamasaki, S., Takizawa, H., Morishita, N., Ohshima, T., Itoh, H., Umeda, T., Isoya, J. (2005) Spin multiplicity and charge state of a silicon vacancy(TV2a)in4H-SiC determined by pulsed ENDOR. Physical Review B, 72 (23) doi:10.1103/physrevb.72.235208

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Reference TypeJournal (article/letter/editorial)
TitleSpin multiplicity and charge state of a silicon vacancy(TV2a)in4H-SiC determined by pulsed ENDOR
JournalPhysical Review B
AuthorsMizuochi, N.Author
Yamasaki, S.Author
Takizawa, H.Author
Morishita, N.Author
Ohshima, T.Author
Itoh, H.Author
Umeda, T.Author
Isoya, J.Author
Year2005 (December 28)Volume72
Issue23
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.72.235208Search in ResearchGate
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Mindat Ref. ID14180846Long-form Identifiermindat:1:5:14180846:0
GUID0
Full ReferenceMizuochi, N., Yamasaki, S., Takizawa, H., Morishita, N., Ohshima, T., Itoh, H., Umeda, T., Isoya, J. (2005) Spin multiplicity and charge state of a silicon vacancy(TV2a)in4H-SiC determined by pulsed ENDOR. Physical Review B, 72 (23) doi:10.1103/physrevb.72.235208
Plain TextMizuochi, N., Yamasaki, S., Takizawa, H., Morishita, N., Ohshima, T., Itoh, H., Umeda, T., Isoya, J. (2005) Spin multiplicity and charge state of a silicon vacancy(TV2a)in4H-SiC determined by pulsed ENDOR. Physical Review B, 72 (23) doi:10.1103/physrevb.72.235208
In(2005, December) Physical Review B Vol. 72 (23) American Physical Society (APS)

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Mizuochi, N., Yamasaki, S., Takizawa, H., Morishita, N., Ohshima, T., Itoh, H., Isoya, J. (2002) Continuous-wave and pulsed EPR study of the negatively charged silicon vacancy withS=32andC3vsymmetry inn-type4H−SiC. Physical Review B, 66 (23) doi:10.1103/physrevb.66.235202
Umeda, T., Ishitsuka, Y., Isoya, J., Son, N. T., Janzén, E., Morishita, N., Ohshima, T., Itoh, H., Gali, A. (2005) EPR and theoretical studies of negatively charged carbon vacancy in4H−SiC. Physical Review B, 71 (19) doi:10.1103/physrevb.71.193202
Mizuochi, N., Yamasaki, S., Takizawa, H., Morishita, N., Ohshima, T., Itoh, H., Isoya, J. (2003) EPR studies of the isolated negatively charged silicon vacancies inn-type4H- and6H-SiC: Identification ofC3vsymmetry and silicon sites. Physical Review B, 68 (16) doi:10.1103/physrevb.68.165206
Umeda, T., Son, N. T., Isoya, J., Janzén, E., Ohshima, T., Morishita, N., Itoh, H., Gali, A., Bockstedte, M. (2006) Identification of the Carbon Antisite-Vacancy Pair in4H-SiC. Physical Review Letters, 96 (14). doi:10.1103/physrevlett.96.145501
Umeda, T., Ishoya, J., Ohshima, T., Morishita, N., Itoh, H., Gali, A. (2007) Identification of positively charged carbon antisite-vacancy pairs in4H−SiC. Physical Review B, 75 (24) doi:10.1103/physrevb.75.245202
Umeda, T., Isoya, J., Morishita, N., Ohshima, T., Kamiya, T. (2004) EPR identification of two types of carbon vacancies in4H−SiC. Physical Review B, 69 (12) doi:10.1103/physrevb.69.121201
Umeda, T., Isoya, J., Morishita, N., Ohshima, T., Kamiya, T., Gali, A., Deák, P., Son, N., Janzén, E. (2004) EPR and theoretical studies of positively charged carbon vacancy in 4H-SiC. Physical Review B, 70 (23) doi:10.1103/physrevb.70.235212
Isoya, J., Ohshima, T., Morishita, N., Kamiya, T., Itoh, H., Yamasaki, S. (2003) Pulsed EPR studies of shallow donor impurities in SiC. Physica B: Condensed Matter, 340. 903-907 doi:10.1016/j.physb.2003.09.097
Carlsson, P., Son, N. T., Gali, A., Isoya, J., Morishita, N., Ohshima, T., Magnusson, B., Janzén, E. (2010) EPR andab initiocalculation study on the EI4 center in4H- and6H-SiC. Physical Review B, 82 (23) doi:10.1103/physrevb.82.235203
Isoya, Junichi, Umeda, T., Mizuochi, N., Ohshima, Takeshi (2009) Pulsed EPR Studies of the Tv2a Center in 4H-SiC. Materials Science Forum, 615. 353-356 doi:10.4028/www.scientific.net/msf.615-617.353
Mizuochi, Norikazu, Isoya, Junichi, Yamasaki, Satoshi, Takizawa, H., Morishita, Norio, Ohshima, Takeshi, Itoh, Hisayoshi (2002) EPR Study of Single Silicon Vacancy-Related Defects in 4H- and 6H-SiC. Materials Science Forum, 389. 497-500 doi:10.4028/www.scientific.net/msf.389-393.497
 
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