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Gali, A., Son, N. T., Janzén, E. (2006) Electrical characterization of metastable carbon clusters inSiC: A theoretical study. Physical Review B, 73 (3) doi:10.1103/physrevb.73.033204

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Reference TypeJournal (article/letter/editorial)
TitleElectrical characterization of metastable carbon clusters inSiC: A theoretical study
JournalPhysical Review B
AuthorsGali, A.Author
Son, N. T.Author
Janzén, E.Author
Year2006 (January 31)Volume73
Issue3
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.73.033204Search in ResearchGate
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Mindat Ref. ID14184422Long-form Identifiermindat:1:5:14184422:2
GUID0
Full ReferenceGali, A., Son, N. T., Janzén, E. (2006) Electrical characterization of metastable carbon clusters inSiC: A theoretical study. Physical Review B, 73 (3) doi:10.1103/physrevb.73.033204
Plain TextGali, A., Son, N. T., Janzén, E. (2006) Electrical characterization of metastable carbon clusters inSiC: A theoretical study. Physical Review B, 73 (3) doi:10.1103/physrevb.73.033204
In(2006, January) Physical Review B Vol. 73 (3) American Physical Society (APS)

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Gali, A., Deák, P., Son, N. T., Janzén, E. (2005) Possibility for the electrical activation of the carbon antisite by hydrogen inSiC. Physical Review B, 71 (3) doi:10.1103/physrevb.71.035213
Hornos, T., Son, N. T., Janzén, E., Gali, A. (2007) Theoretical study of small silicon clusters in4H−SiC. Physical Review B, 76 (16) doi:10.1103/physrevb.76.165209
Gali, A., Deák, P., Ordejón, P., Son, N. T., Janzén, E., Choyke, W. J. (2003) Aggregation of carbon interstitials in silicon carbide: A theoretical study. Physical Review B, 68 (12) doi:10.1103/physrevb.68.125201
Son, N. T., Henry, A., Isoya, J., Katagiri, M., Umeda, T., Gali, A., Janzén, E. (2006) Electron paramagnetic resonance and theoretical studies of shallow phosphorous centers in3C-,4H-, and6H−SiC. Physical Review B, 73 (7) doi:10.1103/physrevb.73.075201
Umeda, T., Isoya, J., Morishita, N., Ohshima, T., Kamiya, T., Gali, A., Deák, P., Son, N., Janzén, E. (2004) EPR and theoretical studies of positively charged carbon vacancy in 4H-SiC. Physical Review B, 70 (23) doi:10.1103/physrevb.70.235212
Umeda, T., Ishitsuka, Y., Isoya, J., Son, N. T., Janzén, E., Morishita, N., Ohshima, T., Itoh, H., Gali, A. (2005) EPR and theoretical studies of negatively charged carbon vacancy in4H−SiC. Physical Review B, 71 (19) doi:10.1103/physrevb.71.193202
Carlsson, P., Son, N. T., Gali, A., Isoya, J., Morishita, N., Ohshima, T., Magnusson, B., Janzén, E. (2010) EPR andab initiocalculation study on the EI4 center in4H- and6H-SiC. Physical Review B, 82 (23) doi:10.1103/physrevb.82.235203
Gali, A., Hornos, T., Son, N. T., Janzén, E., Choyke, W. J. (2007) Ab initiosupercell calculations on aluminum-related defects in SiC. Physical Review B, 75 (4) doi:10.1103/physrevb.75.045211
Umeda, T., Son, N. T., Isoya, J., Janzén, E., Ohshima, T., Morishita, N., Itoh, H., Gali, A., Bockstedte, M. (2006) Identification of the Carbon Antisite-Vacancy Pair in4H-SiC. Physical Review Letters, 96 (14). doi:10.1103/physrevlett.96.145501
Aradi, B., Deák, P., Gali, A., Son, N. T., Janzén, E. (2004) Diffusion of hydrogen in perfect,p-type doped, and radiation-damaged4H−SiC. Physical Review B, 69 (23) doi:10.1103/physrevb.69.233202
Son, N. T., Janzén, E., Isoya, J., Morishita, N., Hanaya, H., Takizawa, H., Ohshima, T., Gali, A. (2009) Identification of a Frenkel-pair defect in electron-irradiated 3CSiC. Physical Review B, 80 (12) doi:10.1103/physrevb.80.125201
 
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