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Umeda, T., Isoya, J., Morishita, N., Ohshima, T., Janzén, E., Gali, A. (2009) Dicarbon antisite defect inn-type4H-SiC. Physical Review B, 79 (11) doi:10.1103/physrevb.79.115211

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Reference TypeJournal (article/letter/editorial)
TitleDicarbon antisite defect inn-type4H-SiC
JournalPhysical Review B
AuthorsUmeda, T.Author
Isoya, J.Author
Morishita, N.Author
Ohshima, T.Author
Janzén, E.Author
Gali, A.Author
Year2009 (March 24)Volume79
Issue11
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.79.115211Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14200370Long-form Identifiermindat:1:5:14200370:3
GUID0
Full ReferenceUmeda, T., Isoya, J., Morishita, N., Ohshima, T., Janzén, E., Gali, A. (2009) Dicarbon antisite defect inn-type4H-SiC. Physical Review B, 79 (11) doi:10.1103/physrevb.79.115211
Plain TextUmeda, T., Isoya, J., Morishita, N., Ohshima, T., Janzén, E., Gali, A. (2009) Dicarbon antisite defect inn-type4H-SiC. Physical Review B, 79 (11) doi:10.1103/physrevb.79.115211
In(2009, March) Physical Review B Vol. 79 (11) American Physical Society (APS)

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Umeda, T., Son, N. T., Isoya, J., Janzén, E., Ohshima, T., Morishita, N., Itoh, H., Gali, A., Bockstedte, M. (2006) Identification of the Carbon Antisite-Vacancy Pair in4H-SiC. Physical Review Letters, 96 (14). doi:10.1103/physrevlett.96.145501
Umeda, T., Isoya, J., Morishita, N., Ohshima, T., Kamiya, T., Gali, A., Deák, P., Son, N., Janzén, E. (2004) EPR and theoretical studies of positively charged carbon vacancy in 4H-SiC. Physical Review B, 70 (23) doi:10.1103/physrevb.70.235212
Umeda, T., Ishitsuka, Y., Isoya, J., Son, N. T., Janzén, E., Morishita, N., Ohshima, T., Itoh, H., Gali, A. (2005) EPR and theoretical studies of negatively charged carbon vacancy in4H−SiC. Physical Review B, 71 (19) doi:10.1103/physrevb.71.193202
Gali, Adam, Umeda, T., Janzén, Erik, Morishita, Norio, Ohshima, Takeshi, Isoya, Junichi (2009) Identification of the Negative Di-Carbon Antisite Defect in n-Type 4H-SiC. Materials Science Forum, 615. 361-364 doi:10.4028/www.scientific.net/msf.615-617.361
Son, N. T., Janzén, E., Isoya, J., Morishita, N., Hanaya, H., Takizawa, H., Ohshima, T., Gali, A. (2009) Identification of a Frenkel-pair defect in electron-irradiated 3CSiC. Physical Review B, 80 (12) doi:10.1103/physrevb.80.125201
Son, N. T., Carlsson, P., ul Hassan, J., Janzén, E., Umeda, T., Isoya, J., Gali, A., Bockstedte, M., Morishita, N., Ohshima, T., Itoh, H. (2006) Divacancy in 4H-SiC. Physical Review Letters, 96 (5). doi:10.1103/physrevlett.96.055501
Carlsson, P., Son, N. T., Gali, A., Isoya, J., Morishita, N., Ohshima, T., Magnusson, B., Janzén, E. (2010) EPR andab initiocalculation study on the EI4 center in4H- and6H-SiC. Physical Review B, 82 (23) doi:10.1103/physrevb.82.235203
Umeda, T., Ishoya, J., Ohshima, T., Morishita, N., Itoh, H., Gali, A. (2007) Identification of positively charged carbon antisite-vacancy pairs in4H−SiC. Physical Review B, 75 (24) doi:10.1103/physrevb.75.245202
Son, N. T., Carlsson, P., ul Hassan, J., Janzén, E., Umeda, T., Isoya, J., Gali, A., Bockstedte, M., Morishita, N., Ohshima, T., Itoh, H. (2006) Publisher’s Note: Divacancy in 4H-SiC [Phys. Rev. Lett.96, 055501 (2006)]. Physical Review Letters, 96 (6). doi:10.1103/physrevlett.96.069902
Son, N.T., Umeda, T., Isoya, J., Gali, A., Bockstedte, M., Magnusson, B., Ellison, A., Morishita, N., Ohshima, T., Itoh, H., Janzén, E. (2006) Identification of divacancies in 4H-SiC. Physica B: Condensed Matter, 376. 334-337 doi:10.1016/j.physb.2005.12.086
Mizuochi, N., Yamasaki, S., Takizawa, H., Morishita, N., Ohshima, T., Itoh, H., Isoya, J. (2002) Continuous-wave and pulsed EPR study of the negatively charged silicon vacancy withS=32andC3vsymmetry inn-type4H−SiC. Physical Review B, 66 (23) doi:10.1103/physrevb.66.235202
 
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