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Jones, Aleksy K., Ballestad, Anders, Li, Tian, Whitwick, Michael, Rottler, Jörg, Tiedje, T. (2009) Faceting at the step flow threshold in epitaxial growth on patterned surfaces. Physical Review B, 79 (20) doi:10.1103/physrevb.79.205419

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Reference TypeJournal (article/letter/editorial)
TitleFaceting at the step flow threshold in epitaxial growth on patterned surfaces
JournalPhysical Review B
AuthorsJones, Aleksy K.Author
Ballestad, AndersAuthor
Li, TianAuthor
Whitwick, MichaelAuthor
Rottler, JörgAuthor
Tiedje, T.Author
Year2009 (May 20)Volume79
Issue20
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.79.205419Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14201703Long-form Identifiermindat:1:5:14201703:8
GUID0
Full ReferenceJones, Aleksy K., Ballestad, Anders, Li, Tian, Whitwick, Michael, Rottler, Jörg, Tiedje, T. (2009) Faceting at the step flow threshold in epitaxial growth on patterned surfaces. Physical Review B, 79 (20) doi:10.1103/physrevb.79.205419
Plain TextJones, Aleksy K., Ballestad, Anders, Li, Tian, Whitwick, Michael, Rottler, Jörg, Tiedje, T. (2009) Faceting at the step flow threshold in epitaxial growth on patterned surfaces. Physical Review B, 79 (20) doi:10.1103/physrevb.79.205419
In(2009, May) Physical Review B Vol. 79 (20) American Physical Society (APS)

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Ballestad, A., Tiedje, T. (2006) Emergence of macroscopic surface structure from atomistic dynamics in epitaxial film growth. Physical Review B, 74 (15) doi:10.1103/physrevb.74.153405
Whitwick, Michael B., Tiedje, T., Li, Tian (2008) Linear smoothing of GaAs(100) during epitaxial growth on rough substrates. Journal of Crystal Growth, 310 (13). 3192-3196 doi:10.1016/j.jcrysgro.2008.03.019
Ballestad, A., Tiedje, T., Schmid, J. H. (2004) Comment on “Transient Evolution of Surface Roughness on Patterned GaAs(001) During Homoepitaxial Growth”. Physical Review Letters, 93 (15). doi:10.1103/physrevlett.93.159601
Heinrichs, Stefan, Rottler, Jörg, Maass, Philipp (2000) Nucleation on top of islands in epitaxial growth. Physical Review B, 62 (12) 8338-8359 doi:10.1103/physrevb.62.8338
Ballestad, A., Ruck, B. J., Adamcyk, M., Pinnington, T., Tiedje, T. (2001) Evidence from the Surface Morphology for Nonlinear Growth of Epitaxial GaAs Films. Physical Review Letters, 86 (11). 2377-2380 doi:10.1103/physrevlett.86.2377
Ballestad, A., Ruck, B. J., Schmid, J. H., Adamcyk, M., Nodwell, E., Nicoll, C., Tiedje, T. (2002) Surface morphology of GaAs during molecular beam epitaxy growth: Comparison of experimental data with simulations based on continuum growth equations. Physical Review B, 65 (20) doi:10.1103/physrevb.65.205302
Schmid, J. H., Tiedje, T., Mar, R., Ballestad, A. (2004) Surface pattern transfer inGaAswith molecular beams ofCl2. Physical Review B, 70 (4) doi:10.1103/physrevb.70.045315
Schmid, J. H., Ballestad, A., Ruck, B. J., Adamcyk, M., Tiedje, T. (2002) Kinetic roughening of GaAs(001) during thermalCl2etching. Physical Review B, 65 (15) doi:10.1103/physrevb.65.155315
Lymperakis, Liverios, Neugebauer, Jörg (2009) Large anisotropic adatom kinetics on nonpolar GaN surfaces: Consequences for surface morphologies and nanowire growth. Physical Review B, 79 (24) doi:10.1103/physrevb.79.241308
Higashi, Shougo, Kocán, Pavel, Tochihara, Hiroshi (2009) Reactive epitaxial growth of MnSi ultrathin films on Si(111) by Mn deposition. Physical Review B, 79 (20) doi:10.1103/physrevb.79.205312
Maroutian, T., Douillard, L., Ernst, H.-J. (2001) Morphological instability of Cu vicinal surfaces during step-flow growth. Physical Review B, 64 (16) doi:10.1103/physrevb.64.165401
 
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