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Carter, Damien J., Warschkow, Oliver, Marks, Nigel A., McKenzie, David R. (2009) Electronic structure models of phosphorusδ-doped silicon. Physical Review B, 79 (3) doi:10.1103/physrevb.79.033204

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Reference TypeJournal (article/letter/editorial)
TitleElectronic structure models of phosphorusδ-doped silicon
JournalPhysical Review B
AuthorsCarter, Damien J.Author
Warschkow, OliverAuthor
Marks, Nigel A.Author
McKenzie, David R.Author
Year2009 (January 29)Volume79
Issue3
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.79.033204Search in ResearchGate
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Mindat Ref. ID14202298Long-form Identifiermindat:1:5:14202298:8
GUID0
Full ReferenceCarter, Damien J., Warschkow, Oliver, Marks, Nigel A., McKenzie, David R. (2009) Electronic structure models of phosphorusδ-doped silicon. Physical Review B, 79 (3) doi:10.1103/physrevb.79.033204
Plain TextCarter, Damien J., Warschkow, Oliver, Marks, Nigel A., McKenzie, David R. (2009) Electronic structure models of phosphorusδ-doped silicon. Physical Review B, 79 (3) doi:10.1103/physrevb.79.033204
In(2009, January) Physical Review B Vol. 79 (3) American Physical Society (APS)

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Carter, Damien J., Warschkow, Oliver, Marks, Nigel A., McKenzie, David R. (2009) Erratum: Electronic structure models of phosphorusδ-doped silicon [Phys. Rev. B79, 033204 (2009)]. Physical Review B, 80 (4) doi:10.1103/physrevb.80.049901
Carter, D. J., Warschkow, O., Marks, N. A., McKenzie, D. R. (2013) Electronic structure of two interacting phosphorusδ-doped layers in silicon. Physical Review B, 87 (4) doi:10.1103/physrevb.87.045204
Bennett, Jennifer M., Warschkow, Oliver, Marks, Nigel A., McKenzie, David R. (2009) Diffusion pathways of phosphorus atoms on silicon (001) Physical Review B, 79 (16) doi:10.1103/physrevb.79.165311
Bennett, Jennifer M., Warschkow, Oliver, Marks, Nigel A., McKenzie, David R. (2010) Pathways for thermal phosphorus desorption from the silicon (001) surface. Physical Review B, 82 (23) doi:10.1103/physrevb.82.235417
Carter, D. J., Warschkow, O., Gale, J. D., Scappucci, G., Klesse, W. M., Capellini, G., Rohl, A. L., Simmons, M. Y., McKenzie, D. R., Marks, N. A. (2013) Electronic structure of phosphorus and arsenicδ-doped germanium. Physical Review B, 88 (11) doi:10.1103/physrevb.88.115203
Scappucci, Giordano, Klesse, Wolfgang M., Yeoh, LaReine A., Carter, Damien J., Warschkow, Oliver, Marks, Nigel A., Jaeger, David L., Capellini, Giovanni, Simmons, Michelle Y., Hamilton, Alexander R. (2015) Bottom-up assembly of metallic germanium. Scientific Reports, 5. doi:10.1038/srep12948
Carter, Damien J., Stampfl, Catherine (2009) Atomic and electronic structure of single and multiple vacancies in GaN nanowires from first-principles. Physical Review B, 79 (19) doi:10.1103/physrevb.79.195302
Bennett, Jennifer M., Warschkow, Oliver, Marks, Nigel A. (2009) Aminoxyl Radicals on the Silicon (001) Surface. The Journal of Physical Chemistry C, 113 (3). 1020-1027 doi:10.1021/jp8065772
Warschkow, O., Schofield, S. R., Marks, N. A., Radny, M. W., Smith, P. V., McKenzie, D. R. (2008) Water on silicon (001):Cdefects and initial steps of surface oxidation. Physical Review B, 77 (20) doi:10.1103/physrevb.77.201305
Rosen, J., Warschkow, O. (2009) Electronic structure of amorphous indium oxide transparent conductors. Physical Review B, 80 (11) doi:10.1103/physrevb.80.115215
Schofield, Steven R., Curson, Neil J., Warschkow, Oliver, Marks, Nigel A., Wilson, Hugh F., Simmons, Michelle Y., Smith, Phillip V., Radny, Marian W., McKenzie, David R., Clark, Robert G. (2006) Phosphine Dissociation and Diffusion on Si(001) Observed at the Atomic Scale. The Journal of Physical Chemistry B, 110 (7). 3173-3179 doi:10.1021/jp054646v
 
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