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Pontes, Renato B., Fazzio, A., Dalpian, Gustavo M. (2009) Barrier-free substitutional doping of graphene sheets with boron atoms:Ab initiocalculations. Physical Review B, 79 (3) doi:10.1103/physrevb.79.033412

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Reference TypeJournal (article/letter/editorial)
TitleBarrier-free substitutional doping of graphene sheets with boron atoms:Ab initiocalculations
JournalPhysical Review B
AuthorsPontes, Renato B.Author
Fazzio, A.Author
Dalpian, Gustavo M.Author
Year2009 (January 26)Volume79
Issue3
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.79.033412Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14202316Long-form Identifiermindat:1:5:14202316:9
GUID0
Full ReferencePontes, Renato B., Fazzio, A., Dalpian, Gustavo M. (2009) Barrier-free substitutional doping of graphene sheets with boron atoms:Ab initiocalculations. Physical Review B, 79 (3) doi:10.1103/physrevb.79.033412
Plain TextPontes, Renato B., Fazzio, A., Dalpian, Gustavo M. (2009) Barrier-free substitutional doping of graphene sheets with boron atoms:Ab initiocalculations. Physical Review B, 79 (3) doi:10.1103/physrevb.79.033412
In(2009, January) Physical Review B Vol. 79 (3) American Physical Society (APS)

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Padilha, J. E., Seixas, L., Pontes, Renato B., da Silva, Antônio J. R., Fazzio, A. (2013) Quantum spin Hall effect in a disordered hexagonal SixGe1−xalloy. Physical Review B, 88 (20) doi:10.1103/physrevb.88.201106
Dalpian, G. M., da Silva, Antônio J. R., Fazzio, A. (2003) Theoretical investigation of a possibleMnxSi1−xferromagnetic semiconductor. Physical Review B, 68 (11) doi:10.1103/physrevb.68.113310
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