Reference Type | Journal (article/letter/editorial) |
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Title | Particle emission from chemically enhanced electron-beam-induced etching of Si: An approach for zero-energy secondary-ion mass spectrometry |
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Journal | Physical Review B |
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Authors | Vanhove, N. | Author |
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Lievens, P. | Author |
Vandervorst, W. | Author |
Year | 2009 (January 6) | Volume | 79 |
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Issue | 3 |
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Publisher | American Physical Society (APS) |
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DOI | doi:10.1103/physrevb.79.035305Search in ResearchGate |
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| Generate Citation Formats |
Mindat Ref. ID | 14202355 | Long-form Identifier | mindat:1:5:14202355:8 |
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GUID | 0 |
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Full Reference | Vanhove, N., Lievens, P., Vandervorst, W. (2009) Particle emission from chemically enhanced electron-beam-induced etching of Si: An approach for zero-energy secondary-ion mass spectrometry. Physical Review B, 79 (3) doi:10.1103/physrevb.79.035305 |
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Plain Text | Vanhove, N., Lievens, P., Vandervorst, W. (2009) Particle emission from chemically enhanced electron-beam-induced etching of Si: An approach for zero-energy secondary-ion mass spectrometry. Physical Review B, 79 (3) doi:10.1103/physrevb.79.035305 |
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In | (2009, January) Physical Review B Vol. 79 (3) American Physical Society (APS) |
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