Reference Type | Journal (article/letter/editorial) |
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Title | Ab initiostudy of charge trapping and dielectric properties of Ti-dopedHfO2 |
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Journal | Physical Review B |
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Authors | Muñoz Ramo, D. | Author |
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Shluger, A. L. | Author |
Bersuker, G. | Author |
Year | 2009 (January 8) | Volume | 79 |
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Issue | 3 |
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Publisher | American Physical Society (APS) |
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DOI | doi:10.1103/physrevb.79.035306Search in ResearchGate |
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| Generate Citation Formats |
Mindat Ref. ID | 14202356 | Long-form Identifier | mindat:1:5:14202356:5 |
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|
GUID | 0 |
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Full Reference | Muñoz Ramo, D., Shluger, A. L., Bersuker, G. (2009) Ab initiostudy of charge trapping and dielectric properties of Ti-dopedHfO2. Physical Review B, 79 (3) doi:10.1103/physrevb.79.035306 |
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Plain Text | Muñoz Ramo, D., Shluger, A. L., Bersuker, G. (2009) Ab initiostudy of charge trapping and dielectric properties of Ti-dopedHfO2. Physical Review B, 79 (3) doi:10.1103/physrevb.79.035306 |
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In | (2009, January) Physical Review B Vol. 79 (3) American Physical Society (APS) |
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